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TCK101G 데이터시트 PDF




Toshiba에서 제조한 전자 부품 TCK101G은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 TCK101G 자료 제공

부품번호 TCK101G 기능
기능 1A Load Switch IC
제조업체 Toshiba
로고 Toshiba 로고


TCK101G 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




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TCK101G 데이터시트, 핀배열, 회로
TCK101G/102G
TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic
TCK101G, TCK102G
1A Load Switch IC with Slew Rate Control Driver
The TCK101G and TCK102G are load switch ICs for power
management with slew rate control driver featuring wide input
voltage operation from 1.1 to 5.5 V. Switch ON resistance is only
55 mtypical at 3.3 V, 500 mA load condition and these feature
a slew rate control driver and thermal shutdown. TCK101G has
output auto-discharge function. Maximum Output current type is
available up to 1 .0A (DC).
This device is available in 0.4 mm pitch ultra small package
WCSP6B (0.8 mm x 1.2 mm, t: 0.64 mm (max)). Thus this device
is ideal for portable applications that require high-density board
assembly such as cellular phone.
WCSP6B
Weight: 1 mg (typ.)
Feature
Wide input voltage operation: VIN = 1.1 to 5.5 V
Low ON resistance :
RON = 50 m(typ.) at VIN = 5.0 V, 500 mA
RON = 55 m(typ.) at VIN = 3.3 V, 500 mA
RON = 75 m(typ.) at VIN = 1.8 V, 500 mA
RON = 120 m(typ.) at VIN = 1.2 V, 500 mA
Low Quiescent Current: IQ = 8 μA (typ.) at VIN = VCT = 5.5 V, IOUT = 0 mA
Low standby current: IQ(OFF) = 0.07 μA (typ.) at OFF state
Inrush current reduction circuit
Thermal Shutdown function
Auto-discharge (TCK101G)
Pull down connection between CONTROL and GND
Ultra small package : WCSP6B (0.8mm x 1.2mm, t: 0.64mm(max))
Start of commercial production
2012-08
1 2014-03-01




TCK101G pdf, 반도체, 판매, 대치품
Electrical Characteristics
DC Characteristics (Ta = -40 to 85°C)
Characteristics
Symbol
Test Condition
Input voltage
CONTROL High-level input voltage
CONTROL Low-level input voltage
Quiescent current ( ON state)
Standby current ( OFF state)
VIN
VIH
VIL
IQ
IQ(OFF)
1.2 V < VIN 5.5 V
1.1 V VIN 1.2 V
VIN = 1.1 to 5.5 V
IOUT = 0 mA,
VIN = VCT = 5.5 V
VIN = 5.5 V, VCT = 0 V,
VOUT = OPEN
(Note 2)
VIN = 5.0 V
OFF-state switch current
ISD(OFF)
On resistance
RON
Discharge on resistance
RSD
Note 2 Except OFF-state switch current
Note 3 Ta = 65
VCT = 0 V,
VOUT = GND
VIN = 3.3 V
VIN = 1.8 V
VIN = 1.2 V
VIN = 5.0 V
VIN = 3.3 V
IOUT = 500 mA VIN = 1.8 V
VIN = 1.2 V
VIN = 1.1 V
⎯ ( TCK101G)
TCK101G/102G
Ta = 25°C
Min Typ. Max
1.1 5.5
1.0 ⎯ ⎯
0.9 ⎯ ⎯
⎯ ⎯ 0.4
8
Ta =
40 to 85°C
Min Max
Unit
1.1 5.5 V
1.0
V
0.9
0.4 V
20 μA
0.07 ⎯ ⎯ 1 μA
10
1000
(Note3)
2 ⎯ ⎯ 1000 nA
1 ⎯ ⎯ 1000
1 ⎯ ⎯ 1000
50 ⎯ ⎯ 70
55 ⎯ ⎯ 75
75 ⎯ ⎯ 100 mΩ
120 ⎯ ⎯ 180
155 ⎯ ⎯ ⎯
100 ⎯ ⎯ ⎯ Ω
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TCK101G 전자부품, 판매, 대치품
2. Power Dissipation
Power dissipation is measured on the board condition shown below.
[The Board Condition]
Board material: Glass epoxy (FR4)
Board dimension: 40mm x 40mm (both sides of board)t=1.8mm
Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50%
Through hole: diameter 0.5mm x 28
TCK101G/102G
1000
PD - Ta
800
600
400
200
0
-40
0 40 80
Ambient Temperature Ta (℃)
120
Please allow sufficient margin when designing a board pattern to fit the expected power dissipation. Also take into
consideration the ambient temperature, input voltage, output current etc and applying the appropriate derating for
allowable power dissipation during operation.
3. Thermal shut down function
Thermal shutdown function is designed in these products, but these does not assure for the suppression of
uprising device operation. In use of these products, please read through and understand dissipation idea for
absolute maximum ratings from the above mention or our ‘Semiconductor Reliability Handbook’. Then use these
products under absolute maximum ratings in any condition. Furthermore, Toshiba recommend inserting failsafe
system into the design.
7 2014-03-01

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관련 데이터시트

부품번호상세설명 및 기능제조사
TCK101G

1A Load Switch IC

Toshiba
Toshiba

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