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PDF TPD4151K Data sheet ( Hoja de datos )
| Número de pieza | TPD4151K | |
| Descripción | High Voltage Monolithic Silicon Power IC | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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TPD4151K
TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC
TPD4151K
The TPD4151K is a DC brushless motor driver using
high-voltage PWM control. It is fabricated using a high-voltage
SOI process. The device contains PWM circuit, 3-phase decode
logic, level shift high-side driver, low-side driver, IGBT outputs,
FRDs, over-current and under-voltage protection circuits, and a
thermal shutdown circuit. It is easy to control a DC brush less
motor by applying a signal from a motor controller and a Hall
amp/ Hall IC to the TPD4151K.
Features
HDIP26-P-1332-2.00
Weight: 3.8 g (typ.)
• High voltage power side and low voltage signal side terminal
are separated.
• Bootstrap circuits give simple high-side supply.
• Bootstrap diodes are built in.
• PWM and 3-phase decoder circuit are built in.
• Outputs Rotation pulse signals.
• 3-phase bridge output using IGBTs.
• FRDs are built in.
• Incorporating over-current and under-voltage protection, and thermal shutdown.
• Package: 26-pin DIP.
• Compatible with Hall amp input and Hall IC input.
This product has a MOS structure and is sensitive to electrostatic discharge. When handling this product, ensure
that the environment is protected against electrostatic discharge.
Start of commercial production
2013-01
1 2014-04-07
1 page  
Internal Circuit diagrams
Internal circuit diagram of HU+, HU-, HV+, HV-, HW+, HW- input pins
VCC
HU+, HU-,
HV+, HV-,
HW+, HW-,
4 kΩ
19.5 V
2 kΩ
To internal circuit
Internal circuit diagram of VS pin
VCC
4 kΩ
VS
25 kΩ
19.5 V
To internal circuit
225 kΩ
Internal circuit diagram of FG pin
FG
To internal circuit
250kΩ
Internal circuit diagram of RS pin
VCC
VREG
RS
4 kΩ
202kΩ
To internal circuit
19.5 V
5pF
Internal circuit diagram of FR pin
VCC
VREG
FR
4 kΩ
200kΩ
19.5 V
2 kΩ
To internal circuit
5
TPD4151K
2014-04-07
5 Page 
TPD4151K
either the edge of a Hall sensor output or the edge of an internal PWM signal, but neither edge is
available due to the motor lock and duty 100 % command. In order to reboot after a lock, the high-side
power voltage must return to a level 0.5 V (typ.) higher than the voltage decrease protection level, and
a high-side input signal must be introduced. As a high-side input signal is created by the
aforementioned level shift pulse, it is possible to reboot by reducing PWM duty to less than 100 % or
by forcing the motor to turn externally and creating an edge at a Hall sensor output. In order to
ensure reboot after a system lock, the motor specification must be such that maximum duty is less
than 100 %.
Description of Protection Function
(1) Over-current protection
The IC incorporates an over-current protection circuit to protect itself against over current at startup
or when a motor is locked. This protection function detects voltage generated in the current-detection
resistor connected to the RS pin. When this voltage exceeds VR (= 0.5 V typ.), the high-side IGBT
output, which is on, temporarily shuts down after a delay time, preventing any additional current
from flowing to the IC. The next PWM ON signal releases the shutdown state.
Duty ON
PWM reference voltage
Triangle wave
Duty OFF
Over-current setting value
toff
Delay time
ton
ton
Output current
Over-current shutdown
Retry
(2) Under-voltage protection
The IC incorporates under-voltage protection circuits to prevent the IGBT from operating in
unsaturated mode when the VCC voltage or the VBS voltage drops.
When the VCC power supply falls to the IC internal setting VCCUVD (= 11 V typ.), all IGBT outputs
shut down regardless of the input. This protection function has hysteresis. When the VCC power
supply reaches 0.5 V higher than the shutdown voltage (VCCUVR (= 11.5 V typ.)), the IC is
automatically restored and the IGBT is turned on/off again by the input.
When the VBS supply voltage drops VBSUVD (= 10 V typ.), the high-side IGBT output shuts down.
When the VBS supply voltage reaches 0.5 V higher than the shutdown voltage (VBSUVR (= 10.5 V
typ.)), the IGBT is turned on/off again by the input signal.
(3) Thermal shutdown
The IC incorporates a thermal shutdown circuit to protect itself against excessive rise in temperature.
When the temperature of this chip rises to the internal setting TSD due to external causes or internal
heat generation, all IGBT outputs shut down regardless of the input. This protection function has
hysteresis ∆TSD (= 50 °C typ.). When the chip temperature falls to TSD − ∆TSD, the chip is
automatically restored and the IGBT is turned on/off again by the input.
Because the chip contains just one temperature-detection location, when the chip heats up due to the
IGBT for example, the distance between the detection location and the IGBT (the source of the heat)
can cause differences in the time taken for shutdown to occur. Therefore, the temperature of the chip
may rise higher than the initial thermal shutdown temperature.
11 2014-04-07
11 Page | ||
| Páginas | Total 25 Páginas | |
| PDF Descargar | [ Datasheet TPD4151K.PDF ] | |
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