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부품번호 | SSF6NS70UD 기능 |
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기능 | N-Channel MOSFET | ||
제조업체 | SILIKRON | ||
로고 | |||
전체 8 페이지수
Main Product Characteristics:
VDSS
RDS(on)
700V
0.95Ω (typ.)
ID 6A ①
Features and Benefits:
TO-252 (DPAK)
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
SSF6NS70UD
Marking and pin
Assignment
Schematic diagram
Description:
The SSF6NS70UD series MOSFETs is a new technology, which combines an innovative super
junction technology and advance process. This new technology achieves low Rdson, energy saving,
high reliability and uniformity, superior power density and space saving.
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ②
Power Dissipation ③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=100mH
Avalanche Current @ L=100mH
Operating Junction and Storage Temperature Range
Max.
6①
3.7①
18
33
0.264
700
± 30
72
1.2
-55 to +150
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2013.02.25
www.silikron.com
Version : 1.0
page 1 of 8
Typical electrical and thermal characteristics
SSF6NS70UD
Figure 1: Typical Output Characteristics
Figure 2. Gate to source cut-off voltage
Figure 3. Drain-to-Source Breakdown Voltage Vs.
Case Temperature
Figure 4: Normalized On-Resistance Vs. Case
Temperature
©Silikron Semiconductor CO.,LTD.
2013.02.25
www.silikron.com
Version : 1.0
page 4 of 8
4페이지 Ordering and Marking Information
Device Marking: SSF6NS70UD
Package (Available)
TO-252(DPAK)
Operating Temperature Range
C : -55 to 150 ºC
SSF6NS70UD
Devices per Unit(options)
Package
Type
Units/Tape Tapes/Inner
Box
TO-252
TO-252
TO-252
2500
2500
800
2
1
5
Units/Inner
Box
5000
2500
4000
Inner
Boxes/Carton
Box
7
10
8
Units/Carton
Box
35000
25000
32000
Reliability Test Program
Test Item
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Conditions
Tj=125℃ to 150℃ @
80% of Max
VDSS/VCES/VR
Tj=150℃ @ 100% of
Max VGSS
Duration
168 hours
500 hours
1000 hours
Sample Size
3 lots x 77 devices
168 hours 3 lots x 77 devices
500 hours
1000 hours
©Silikron Semiconductor CO.,LTD.
2013.02.25
www.silikron.com
Version : 1.0
page 7 of 8
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ SSF6NS70UD.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
SSF6NS70UD | N-Channel MOSFET | SILIKRON |
SSF6NS70UD | N-Channel MOSFET | GOOD-ARK |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |