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PDF SSF7NS65UD Data sheet ( Hoja de datos )
| Número de pieza | SSF7NS65UD | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | SILIKRON | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SSF7NS65UD (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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Main Product Characteristics
VDSS
RDS(on)
650V
0.65Ω (typ.)
ID 7A ①
Features and Benefits
TO-252 (DPAK)
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
SSF7NS65UD
Marking and Pin
Assignment
Schematic Diagram
Description
The SSF7NS65UD series MOSFETs is a new technology, which combines an innovative technology
and advance process. This new technology achieves low Rdson, energy saving, high reliability and
uniformity, superior power density and space saving.
Absolute Max Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ②
Power Dissipation ③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=100mH
Avalanche Current @ L=100mH
Operating Junction and Storage Temperature Range
Max.
7①
5①
28
42
0.33
650
± 30
480
3.1
-55 to +150
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2013.08.27
www.silikron.com
Version : 1.0
page 1 of 8
1 page  
Typical electrical and thermal characteristics
SSF7NS65UD
Figure 5. Maximum Drain Current Vs. Case
Temperature
Figure 6. Typical Capacitance Vs. Drain-to-Source
Voltage
Figure7. Drain-to-Source Voltage Vs. Gate-to-Source Voltage
Figure8. Maximum Effective Transient Thermal Impedance,
Junction-to-Case
©Silikron Semiconductor CO.,LTD.
2013.08.27
www.silikron.com
Version : 1.0
page 5 of 8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SSF7NS65UD.PDF ] | |
Hoja de datos destacado
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