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PDF SSF8N65 Data sheet ( Hoja de datos )
| Número de pieza | SSF8N65 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | SILIKRON | |
| Logotipo |  |
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SSF8N65
Features
■ Extremely high dv/dt capability
■ Low Gate Charge Qg results in Simple Drive Requirement
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatability
Description
The SSF8N65 is a new generation of high voltage
N–Channel enhancement mode power MOSFETs and is
obtained through an extreme optimization layout design, in
additional to pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt capability, provide
superior switching performance, withstand high energy pulse in
the avalanche, and increases packing density.
Application
■ High current, high speed switching
■ Ideal for off-line power supply, adaptor, PFC
VDSS = 650V
ID = 8A
Rdson = 0.95Ω (typ.)
SSF8N65 TOP View (TO220)
Absolute Maximum Ratings
Parameter
ID@Tc=25 ْC
ID@Tc=100ْC
Continuous Drain Current,VGS@10V
Continuous Drain Current,VGS@10V
IDM Pulsed Drain Current ①
PD@TC=25ْC
Power Dissipation
Linear derating Factor
VGS
Gate-to-Source Voltage
EAS
Single Pulse Avalanche Energy ②
IAR Avalanche Current ①
EAR
Repetitive Avalanche Energy ①
dv/dt
Peak Diode Recovery dv/dt ③
TJ Operating Junction and
TSTG
Storage Temperature Range
Max.
8.2
5.5
32.8
145
0.8
±30
586
4
15
4.5
–55 to +150
Thermal Resistance
RθJC
RθCS
Parameter
Junction-to-case
Case-to-Sink,Flat,Greased Surface
Min.
—
—
Typ. Max.
— 0.86
0.50 —
RθJA
Junction-to-Ambient
— — 62.5
Units
A
W
W/ Cْ
V
mJ
A
mJ
V/ns
ْC
Units
ْC/W
©Silikron Semiconductor Corporation
2010.1.10
Version: 1.0
page 1of6
1 page  
Test Circuit and Waveform
SSF8N65
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveform
Unclamped Inductive Switching Test Circuit & Waveform
©Silikron Semiconductor Corporation
2010.1.10
Version: 1.0
page 5of6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SSF8N65.PDF ] | |
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