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SSM04N70BGP-A 데이터시트 PDF




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부품번호 SSM04N70BGP-A 기능
기능 N-channel Enhancement-mode Power MOSFET
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SSM04N70BGP-A 데이터시트, 핀배열, 회로
SSM04N70BGP-A
N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS
650V
R DS(ON)
2.4
I D 4A
Pb-free; RoHS-compliant TO-220
G
D
S
TO-220 (suffix P)
DESCRIPTION
The SSM04N70BGP-A achieves fast switching performance
with low gate charge without a complex drive circuit. It
is suitable for high voltage applications such as AC/DC
converters, SMPS and general off-line switching circuits.
The SSM04N70BGP-A is in TO-220 for through-hole
mounting where a small footprint is required on the board,
and/or an external heatsink is to be attached.
These devices are manufactured with an advanced process,
providing improved on-resistance and switching performance.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VGS
ID
IDM
PD
EAS
IAR
EAR
TSTG
TJ
Drain-source voltage
Gate-source voltage
Continuous drain current, TC = 25°C
Pulsed drain current1
TC = 100°C
Total power dissipation, TC = 25°C
Linear derating factor
Single pulse avalanche energy3
Avalanche current
Repetitive avalanche energy
Storage temperature range
Operating junction temperature range
THERMAL CHARACTERISTICS
Symbol
Parameter
RΘJC
RΘJA
Maximum thermal resistance, junction-case
Maximum thermal resistance, junction-ambient
Notes:
1. Pulse width must be limited to avoid exceeding the safe operating area.
2. Pulse width <300us, duty cycle <2%.
3. Starting Tj = 25°C, VDD=50V , L=25mH , RG=25, IAS= 4A.
9/29/2006 Rev.3.1
www.SiliconStandard.com
Value
650
±30
4
2.5
15
62.5
0.5
100
4
4
-55 to 150
-55 to 150
Value
2
62
Units
V
V
A
A
A
W
W/°C
mJ
A
mJ
°C
°C
Units
°C/W
°C/W
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SSM04N70BGP-A pdf, 반도체, 판매, 대치품
SSM04N70BGP-A
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
25
50 75 100 125
T c , Case Temperature ( o C )
150
Fig 5. Maximum Drain Current vs.
Case Temperature
40
20
0
0 50 100 150
T c , Case Temperature ( o C )
Fig 6. Typical Power Dissipation
100
10
1
0.1
0.01
1
T c =25 o C
Single Pulse
10
100
V DS (V)
10us
100us
1ms
10ms
100ms
1000
10000
Fig 7. Maximum Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 8. Effective Transient Thermal Impedance
9/29/2006 Rev.3.1
www.SiliconStandard.com
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SSM04N70BGP-A 전자부품, 판매, 대치품
PHYSICAL DIMENSIONS - TO-220
E
φ L1
L2
L5
A
D
L4
b1
L3
L
bc
SSM04N70BGP-A
SYMBOLS
Millimeters
MIN NOM MAX
A 4.25 4.48 4.70
b 0.65 0.80 0.90
c1 b1 1.15 1.38 1.60
c 0.40 0.50 0.60
c1 1.00 1.20 1.40
E 9.70 10.00 10.40
e ---- 2.54 ----
L 12.70 13.60 14.50
L1 2.60 2.80 3.00
L2 1.00 1.40 1.80
L3 2.6 3.10 3.6
L4 14.70 15.50 16
L5 6.30 6.50 6.70
φ 3.50 3.60 3.70
D 8.40 8.90 9.40
1. All dimensions are in millimeters.
2. Dimensions do not include mold protrusions.
e
PART MARKING - TO-220
PACKING: Moisture sensitivity level MSL3
1000pcs in tubes packed inside a
moisture barrier bag (MBB).
04N70BP-A
YWWSSS
PART NUMBER: 04N70BGP-A = SSM04N70BGP-A
DATE/LOT CODE:
Y = last digit of the year
WW = work week (01 -> 52)
SSS = lot code sequence
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
9/29/2006 Rev.3.1
www.SiliconStandard.com
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SSM04N70BGP-A

N-channel Enhancement-mode Power MOSFET

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