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PDF 5SNA1200E250100 Data sheet ( Hoja de datos )
| Número de pieza | 5SNA1200E250100 | |
| Descripción | IGBT Module | |
| Fabricantes | ABB | |
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VCE =
IC =
2500 V
1200 A
ABB HiPakTM
IGBT Module
5SNA 1200E250100
• Low-loss, rugged SPT chip-set
• Smooth switching SPT chip-set for
good EMC
• Industry standard package
• High power density
• AlSiC base-plate for high power
cycling capability
• AlN substrate for low thermal
resistance
Doc. No. 5SYA 1557-02 July 04
Maximum rated values 1)
Parameter
Symbol Conditions
Collector-emitter voltage
DC collector current
Peak collector current
Gate-emitter voltage
Total power dissipation
DC forward current
Peak forward current
Surge current
IGBT short circuit SOA
Isolation voltage
Junction temperature
Junction operating temperature
Case temperature
Storage temperature
Mounting torques 2)
VCES
IC
ICM
VGES
Ptot
IF
IFRM
IFSM
tpsc
Visol
Tvj
Tvj(op)
Tc
Tstg
M1
M2
M3
VGE = 0 V
Tc = 80 °C
tp = 1 ms, Tc = 80 °C
Tc = 25 °C, per switch (IGBT)
VR = 0 V, Tvj = 125 °C,
tp = 10 ms, half-sinewave
VCC = 1900 V, VCEMCHIP ≤ 2500 V
VGE ≤ 15 V, Tvj ≤ 125 °C
1 min, f = 50 Hz
Base-heatsink, M6 screws
Main terminals, M8 screws
Auxiliary terminals, M4 screws
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747
2) For detailed mounting instructions refer to ABB Document No. 5SYA2039
min max Unit
2500 V
1200 A
2400 A
-20 20 V
11000 W
1200 A
2400 A
11000 A
10 µs
5000 V
150 °C
-40 125 °C
-40 125 °C
-40 125 °C
46
8 10 Nm
23
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
1 page  
5SNA 1200E250100
2400
2200
2000
1800
1600
25 °C
125 °C
1400
1200
1000
800
600
400
200 VGE = 15 V
0
012345
VCE [V]
2400
2200
2000
1800
1600
1400
1200
1000
800 125 °C
600 25 °C
400
200
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13
VGE [V]
Fig. 1 Typical on-state characteristics, chip level
Fig. 2 Typical transfer characteristics, chip level
2400
2200
2000
1800
1600
1400
17 V
15 V
13 V
11 V
1200
1000
800
600
9V
400
200
0
01
Tvj = 25°C
23456
VCE [V]
2400
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
17 V
15 V
13 V
11 V
9V
Tvj = 125 °C
123456
VCE [V]
Fig. 3 Typical output characteristics, chip level
Fig. 4 Typical output characteristics, chip level
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1557-02 July 04
page 5 of 9
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