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부품번호 | 5SNE0800E330100 기능 |
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기능 | IGBT Module | ||
제조업체 | ABB | ||
로고 | |||
전체 9 페이지수
VCE =
IC =
3300 V
800 A
ABB HiPakTM
IGBT Module
5SNE 0800E330100
PRELIMINARY
• Low-loss, rugged SPT chip-set
• Smooth switching SPT chip-set for
good EMC
• Industry standard package
• High power density
• AlSiC base-plate for high power
cycling capability
• AlN substrate for low thermal
resistance
Doc. No. 5SYA1562-01 July 07
Maximum rated values 1)
Parameter
Symbol Conditions
min max Unit
Collector-emitter voltage
VCES VGE = 0 V, Tvj ≥ 25 °C
DC collector current
IC Tc = 80 °C
Peak collector current
ICM tp = 1 ms, Tc = 80 °C
Gate-emitter voltage
VGES
-20
Total power dissipation
Ptot Tc = 25 °C, per switch (IGBT)
DC forward current
IF Either diode
Peak forward current
Surge current
IGBT short circuit SOA
IFRM
IFSM
VR = 0 V, Tvj = 125 °C,
tp = 10 ms, half-sinewave, either diode
tpsc
VCC = 2500 V, VCEMCHIP ≤ 3300 V
VGE ≤ 15 V, Tvj ≤ 125 °C
Isolation voltage
Visol t = 1 min, f = 50 Hz
Junction temperature
Tvj
Junction operating temperature Tvj(op)
-40
Case temperature
Tc
-40
Storage temperature
Tstg
-40
Ms Base-heatsink, M6 screws
4
Mounting torques 2)
Mt1 Main terminals, M8 screws
8
Mt2 Auxiliary terminals, M4 screws
2
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747
2) For detailed mounting instructions refer to ABB Document No. 5SYA2039
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
3300
800
1600
20
7700
800
1600
8000
V
A
A
V
W
A
A
A
10 µs
6000
150
125
125
125
6
10
3
V
°C
°C
°C
°C
Nm
Electrical configuration
Outline drawing 2)
5SNE 0800E330100
Note: all dimensions are shown in mm
2) For detailed mounting instructions refer to ABB Document No. 5SYA2039
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.
This product has been designed and qualified for Industrial Level.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1562-01 July 07
page 4 of 9
4페이지 5SNE 0800E330100
1000
100
10
Cies
Coes
Cres
VGE = 0V
fOSC = 1 MHz
VOSC = 50 mV
1
0 5 10 15 20 25 30 35
VCE [V]
Fig. 9 Typical capacitances
vs collector-emitter voltage
20
15
VCC = 1800 V
VCC = 2500 V
10
5
IC = 800 A
Tvj = 25 °C
0
012345678
Qg [µC]
Fig. 10 Typical gate charge characteristics
2.5
VCC ≤ 2500 V, Tvj = 125 °C
VGE = ±15 V, RG = 2.2 ohm
2
1.5
1
0.5
Chip
Module
0
0 500 1000 1500 2000 2500 3000 3500
VCE [V]
Fig. 11 Turn-off safe operating area (RBSOA)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1562-01 July 07
page 7 of 9
7페이지 | |||
구 성 | 총 9 페이지수 | ||
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
5SNE0800E330100 | IGBT Module | ABB |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |