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부품번호 | IXYN100N120C3H1 기능 |
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기능 | IGBT ( Insulated Gate Bipolar Transistor ) | ||
제조업체 | IXYS | ||
로고 | |||
전체 7 페이지수
1200V XPTTM IGBT
GenX3TM w/ Diode
High-Speed IGBT
for 20-50 kHz Switching
Preliminary Technical Information
IXYN100N120C3H1
VCES
IC110
VCE(sat)
tfi(typ)
=
=
≤
=
1200V
62A
3.5V
110ns
E
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
IF110
ICM
IA
EAS
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
VISOL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C (Chip Capability)
TTCC
= 110°C
= 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 125°C, RG = 1Ω
Clamped Inductive Load
TC = 25°C
50/60Hz
IISOL ≤ 1mA
t = 1min
t = 1s
Mounting Torque
Terminal Connection Torque
Maximum Ratings
1200
1200
V
V
±20 V
±30 V
134 A
62 A
42 A
440 A
50 A
1.2 J
ICM = 200
≤@VCE VCES
690
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
2500
3000
V~
V~
1.5/13 Nm/lb.in.
1.3/11.5 Nm/lb.in.
30 g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 125°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC = 100A, VGE = 15V, Note 1
TJ = 125°C
Characteristic Values
Min. Typ. Max.
1200
V
3.0 5.0 V
50 μA
3 mA
±100 nA
2.9 3.5 V
3.9 V
SOT-227B, miniBLOC
E153432
Ec
G
Ec
C
G = Gate, C = Collector, E = Emitter
c either emitter terminal can be used as
Main or Kelvin Emitter
Features
z Optimized for Low Switching Losses
z Square RBSOA
z Isolation Voltage 2500V~
z Anti-Parallel Ultra Fast Diode
z Positive Thermal Coefficient of
Vce(sat)
z Avalanche Rated
z High Current Handling Capability
z International Standard Package
Advantages
z High Power Density
z Low Gate Drive Requirement
Applications
z High Frequency Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
© 2013 IXYS CORPORATION, All Rights Reserved
DS100407A(03/13)
IXYN100N120C3H1
Fig. 7. Transconductance
90
80 TJ = - 40ºC
70
25ºC
60
125ºC
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180 200
IC - Amperes
16
14 VCE = 600V
I C = 100A
12 I G = 10mA
Fig. 8. Gate Charge
10
8
6
4
2
0
0 40 80 120 160 200 240 280
QG - NanoCoulombs
100,000
f = 1 MHz
10,000
Fig. 9. Capacitance
Cies
1,000
100
10
0
1
Coes
Cres
5 10 15 20 25 30 35 40
VCE - Volts
Fig. 10. Reverse-Bias Safe Operating Area
220
200
180
160
140
120
100
80
60
TJ = 125ºC
40 RG = 1Ω
20 dv / dt < 10V / ns
0
200 300 400 500 600 700 800 900 1000 1100 1200 1300
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
0.3
aaaaaa
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
4페이지 IXYN100N120C3H1
120
100
80
60
40
20
0
0
Fig. 21. Typ. Forward Characteristics
TVJ = 25ºC
TVJ = 125ºC
0.5 1 1.5 2 2.5 3
VF - Volts
Fig. 22. Typ. Reverse Recovery Charge Qrr vs. -diF/dt
12
11
TVJ = 125ºC
VR = 600V
10
120A
9
8 60A
7
6
5 30A
4
600
700
800
900
1000
1100
1200
1300
-diF/dt - [A/µs]
Fig. 23. Typ. PeakReverse Current IRM vs. -diF/dt
90
TVJ = 125ºC
80 VR = 600V
120A
70
60 60A
50 30A
40
30
20
600
700
800
900
1000
1100
1200
1300
-diF/dt - [A/µs]
Fig. 24. Typ. Recovery Time trr vs. -diF/dt
700
TVJ = 125ºC
600 VR = 600V
500
400
120A
60A
300
30A
200
600
700
800
900
1000
1100
1200
1300
-diF/dt - [A/µs]
Fig. 25. Typ. Recovery Energy Erec vs. -diF/dt
4.0
3.6
TVJ = 125ºC
VR = 600V
120A
3.2
2.8
60A
2.4
2.0
1.6 30A
1.2
0.8
600
700
800
900
1000
1100
1200
1300
-diF/dt - [A/µs]
Fig. 26. Maximum Transient Thermal Impedance
1
0.1
0.01
0.0001
0.001
0.01 0.1
Pulse Width - Seconds
1
10
© 2013 IXYS CORPORATION, All Rights Reserved
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부품번호 | 상세설명 및 기능 | 제조사 |
IXYN100N120C3H1 | IGBT ( Insulated Gate Bipolar Transistor ) | IXYS |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |