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PDF IXYN82N120C3 Data sheet ( Hoja de datos )
| Número de pieza | IXYN82N120C3 | |
| Descripción | IGBT | |
| Fabricantes | IXYS | |
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1200V XPTTM IGBT
GenX3TM
High-Speed IGBT
for 20-50 kHz Switching
Preliminary Technical Information
IXYN82N120C3
VCES =
IC110 =
V ≤CE(sat)
tfi(typ) =
1200V
66A
3.2V
93ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
IA
EAS
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
VISOL
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 2Ω
Clamped Inductive Load
TC = 25°C
50/60Hz
IISOL ≤ 1mA
t = 1min
t = 1s
Mounting Torque
Terminal Connection Torque
Maximum Ratings
1200
1200
V
V
±20 V
±30 V
120 A
66 A
380 A
41 A
800 mJ
ICM = 164
≤@VCE VCES
600
A
W
-55 ... +175
175
-55 ... +175
°C
°C
°C
2500
3000
V~
V~
1.5/13 Nm/lb.in.
1.3/11.5 Nm/lb.in.
30 g
SOT-227B, miniBLOC
E153432
Ec
G
Ec
C
G = Gate, C = Collector, E = Emitter
c either emitter terminal can be used as
Main or Kelvin Emitter
Features
z Optimized for Low Switching Losses
z Square RBSOA
z 2500V~ Isolation Voltage
z Positive Thermal Coefficient of
Vce(sat)
z Avalanche Rated
z High Current Handling Capability
z International Standard Package
Advantages
z High Power Density
z Low Gate Drive Requirement
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC
=
82A,
VGE
=
15V,
Note
1
TJ
=
150°C
Characteristic Values
Min. Typ. Max.
1200
V
2.5 4.5 V
25 μA
500 μA
±100 nA
2.75
3.76
3.20 V
V
Applications
z High Frequency Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
© 2012 IXYS CORPORATION, All Rights Reserved
DS100389A(12/12)
1 page  
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
8
7 Eoff
Eon - - - -
TJ = 125ºC , VGE = 15V
6 VCE = 600V
5 I C = 80A
4
3
2
I C = 40A
1
0
2 4 6 8 10 12 14 16
RG - Ohms
16
14
12
10
8
6
4
2
0
18
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
4.5
4 Eoff
Eon - - - -
RG = 2Ω , VGE = 15V
3.5 VCE = 600V
3
I C = 80A
2.5
2
1.5 I C = 40A
1
0.5
25
50 75
TJ - Degrees Centigrade
100
9
8
7
6
5
4
3
2
1
125
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
280 240
t f i td(off) - - - -
240
RG = 2Ω , VGE = 15V
230
VCE = 600V
200 220
160 210
TJ = 125ºC
120 200
80
TJ = 25ºC
40
190
180
0 170
40 50 60 70 80 90 100
IC - Amperes
© 2012 IXYS CORPORATION, All Rights Reserved
IXYN82N120C3
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
40
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
Eoff Eon - - - -
RG = 2Ω , VGE = 15V
VCE = 600V
TJ = 125ºC
TJ = 25ºC
50 60 70 80 90
IC - Amperes
10
9
8
7
6
5
4
3
2
1
100
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
200
180 t f i
td(off) - - - -
TJ = 125ºC, VGE = 15V
160 VCE = 600V
780
700
620
140
I C = 40A
120
540
460
100 380
80 300
I C = 80A
60 220
40 140
2 4 6 8 10 12 14 16 18
RG - Ohms
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
240 280
t f i td(on) - - - -
200 RG = 2Ω , VGE = 15V
VCE = 600V
260
160 240
I C = 40A
120 220
80
I C = 80A
200
40 180
0 160
25 50 75 100 125
TJ - Degrees Centigrade
5 Page | ||
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| PDF Descargar | [ Datasheet IXYN82N120C3.PDF ] | |
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