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PDF IXYN100N65B3D1 Data sheet ( Hoja de datos )
| Número de pieza | IXYN100N65B3D1 | |
| Descripción | Diode ( Rectifier ) | |
| Fabricantes | IXYS | |
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Advance Technical Information
XPTTM 650V
GenX3TM w/ Diode
IXYN100N65B3D1
Extreme Light Punch Through
IGBT for 10-30kHz Switching
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
IF110
ICM
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
VISOL
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
TC = 25°C
TTCC
= 110°C
= 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 3
Clamped Inductive Load
VGE = 15V, VCE = 360V, TJ = 150°C
RG = 82, Non Repetitive
TC = 25°C
50/60Hz
IISOL 1mA
t = 1min
t = 1s
Mounting Torque
Terminal Connection Torque
Maximum Ratings
650
650
±20
±30
V
V
V
V
185 A
100 A
67 A
490 A
50 A
600 mJ
ICM = 200
@VCE VCES
8
A
μs
600
-55 ... +175
175
-55 ... +175
2500
3000
1.5/13
1.3/11.5
30
W
°C
°C
°C
V~
V~
Nm/lb.in
Nm/lb.in
g
VCES = 650V
IC110 = 100A
VCE(sat) 1.85V
tfi(typ) = 73ns
SOT-227B, miniBLOC
E153432
E
G
E
C
G = Gate, C = Collector, E = Emitter
either emitter terminal can be used as
Main or Kelvin Emitter
Features
International Standard Package
miniBLOC, with Aluminium Nitride
Isolation
2500V~ Isolation Voltage
Anti-Parallel Diode
Optimized for 10-30kHz Switching
Square RBSOA
Short Circuit Capability
High Current Handling Capability
Advantages
High Power Density
Low Gate Drive Requirement
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC = 70A, VGE = 15V, Note 1
TJ = 150C
Characteristic Values
Min. Typ. Max.
650 V
3.5 6.0 V
50 A
3 mA
100 nA
1.53
1.77
1.85 V
V
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2013 IXYS CORPORATION, All Rights Reserved
DS100680(8/15)
1 page  
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
7
Eoff Eon - - - -
6 TJ = 150ºC , VGE = 15V
VCE = 400V
5
14
12
10
4 I C = 100A
3
8
6
2 I C = 50A
1
4
2
00
3 6 9 12 15 18 21 24 27 30 33
RG (Ω)
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
7
Eoff Eon - - - -
6 RG = 3Ω , VGE = 15V
VCE = 400V
5
4
IC = 100A
7
6
5
4
33
22
IC = 50A
11
00
25 50 75 100 125 150
TJ (ºC)
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
220 210
200
tfi
td(off) - - - -
200
RG = 3Ω , VGE = 15V
180
VCE = 400V
190
160 180
140 TJ = 150ºC
170
120 160
100 150
80
TJ = 25ºC
60
140
130
40 120
50 55 60 65 70 75 80 85 90 95 100
IC (A)
IXYN100N65B3D1
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
7
6 Eoff
Eon - - - -
RG = 3Ω , VGE = 15V
5 VCE = 400V
7
6
5
4
TJ = 150ºC
3
4
3
2
1 TJ = 25ºC
2
1
00
50 55 60 65 70 75 80 85 90 95 100
IC (A)
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
240 800
220 t f i
td(off) - - - -
TJ = 150ºC, VGE = 15V
200 VCE = 400V
700
600
180 500
160
I C = 50A
140
I C = 100A
120
400
300
200
100 100
80 0
3 6 9 12 15 18 21 24 27 30 33
RG (Ω)
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
220 220
200 t f i
td(off) - - - -
180 RG = 3Ω , VGE = 15V
VCE = 400V
160
I C = 50A
210
200
190
140 180
120 170
100
I C = 100A
160
80 150
60 140
40 130
20 120
25 50 75 100 125 150
TJ (ºC)
© 2013 IXYS CORPORATION, All Rights Reserved
5 Page | ||
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