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PDF IXYP10N65C3D1M Data sheet ( Hoja de datos )
| Número de pieza | IXYP10N65C3D1M | |
| Descripción | IGBT | |
| Fabricantes | IXYS | |
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Preliminary Technical Information
XPTTM 650V IGBT
GenX3TM w/Diode
(Electrically Isolated Tab)
IXYP10N65C3D1M
VCES = 650V
IC110 = 7A
VCE(sat) 2.6V
tfi(typ) = 23ns
Extreme Light Punch Through
IGBT for 20-60kHz Switching
OVERMOLDED TO-220
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
IIFC1M10
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
TC = 25°C
TC = 110°C
TTCC
= 110°C
= 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 50
Clamped Inductive Load
VGE = 15V, VCE = 360V, TJ = 150°C
RG = 150, Non Repetitive
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
650 V
650 V
±20 V
±30 V
15 A
7A
13 A
50 A
5A
100 mJ
ICM = 20
@VCE VCES
8
A
μs
53
-55 ... +175
175
-55 ... +175
300
260
1.13/10
2.5
W
°C
°C
°C
°C
°C
Nm/lb.in
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC
=
10A,
VGE
=
15V,
Note
1
TJ
=
150C
Characteristic Values
Min. Typ. Max.
650 V
3.5 6.0 V
10 A
400 A
100 nA
2.27
2.54
2.60 V
V
GCE
Isolated Tab
G = Gate
E = Emitter
C = Collector
Features
Optimized for 20-60kHz Switching
Plastic Overmolded Tab for Electrical
Isolation
Square RBSOA
Avalanche Rated
Anti-Parallel Fast Diode
Short Circuit Capability
International Standard Package
Advantages
High Power Density
Extremely Rugged
Low Gate Drive Requirement
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
High Frequency Power Inverters
© 2014 IXYS CORPORATION, All Rights Reserved
DS100605A(7/14)
1 page  
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
0.6
Eoff Eon - - - -
0.5 TJ = 150ºC , VGE = 15V
VCE = 400V
0.4
I C = 20A
0.3
2.4
2.0
1.6
1.2
0.2 0.8
0.1 I C = 10A
0.4
0.0 0.0
50 60 70 80 90 100 110 120
RG - Ohms
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
0.6
Eoff Eon - - - -
0.5 RG = 50Ω , VGE = 15V
VCE = 400V
0.4
I C = 20A
1.4
1.2
1.0
0.3 0.8
0.2 0.6
IC = 10A
0.1 0.4
0.0
25
50 75 100
TJ - Degrees Centigrade
125
0.2
150
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
55 130
50
tfi
td(off) - - - -
120
RG = 50Ω , VGE = 15V
45
VCE = 400V
110
40 100
35
TJ = 150ºC
90
30 80
25 70
20
TJ = 25ºC
60
15 50
4 6 8 10 12 14 16 18 20
IC - Amperes
© 2014 IXYS CORPORATION, All Rights Reserved
IXYP10N65C3D1M
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
0.5 2.0
Eoff Eon - - - -
0.4 RG = 50Ω , VGE = 15V
VCE = 400V
0.3
TJ = 150ºC
1.6
1.2
0.2 0.8
TJ = 25ºC
0.1 0.4
0.0 0.0
4 6 8 10 12 14 16 18 20
IC - Amperes
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
55 160
t f i td(off) - - - -
50 TJ = 150ºC, VGE = 15V
VCE = 400V
45
140
120
40
35 I C = 20A
I C = 10A
100
80
30 60
25 40
50 60 70 80 90 100 110 120
RG - Ohms
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
50 110
t f i td(off) - - - -
45 RG = 50Ω , VGE = 15V
VCE = 400V
40
100
90
35 I C = 10A
80
30
I C = 20A
70
25 60
20 50
15
25
50 75 100 125
TJ - Degrees Centigrade
40
150
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXYP10N65C3D1M.PDF ] | |
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