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부품번호 | IXYP20N65C3D1M 기능 |
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기능 | IGBT ( Insulated Gate Bipolar Transistor ) | ||
제조업체 | IXYS | ||
로고 | |||
전체 6 페이지수
Preliminary Technical Information
XPTTM 650V IGBT
GenX3TM w/Diode
IXYP20N65C3D1M
Extreme Light Punch Through
IGBT for 20-60 kHz Switching
VCES = 650V
IC110 = 9A
VCE(sat) 2.5V
tfi(typ) = 28ns
Symbol
VCES
VCGR
VGES
VGEM
IICC12150
IF110
ICM
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
TTCC
= 25°C
= 110°C
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 20
Clamped Inductive Load
VGE = 15V, VCE = 360V, TJ = 150°C
RG = 82, Non Repetitive
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Maximum Ratings
650 V
650 V
±20 V
±30 V
18 A
9A
13 A
105 A
10 A
200 mJ
ICM = 40
VCE VCES
10
A
μs
50
-55 ... +175
175
-55 ... +175
300
260
1.13/10
2.5
W
°C
°C
°C
°C
°C
Nm/lb.in
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC
=
20A,
VGE
=
15V,
Note
1
TJ
=
150C
Characteristic Values
Min. Typ. Max.
650 V
3.5 6.0 V
10 A
400 A
100 nA
2.27
2.44
2.50 V
V
OVERMOLDED TO-220
GCE
Isolated Tab
G = Gate
E = Emitter
C = Collector
Features
Optimized for 20-60kHz Switching
Plastic Overmolded Tab for Electrical
Isolation
Square RBSOA
Avalanche Rated
Anti-Parallel Fast Diode
Short Circuit Capability
International Standard Package
Advantages
High Power Density
Extremely Rugged
Low Gate Drive Requirement
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
High Frequency Power Inverters
© 2013 IXYS CORPORATION, All Rights Reserved
DS100550A(7/14)
IXYP20N65C3D1M
16
14 VCE = 10V
12
10
8
6
4
2
0
0 5 10
Fig. 7. Transconductance
TJ = - 40ºC
25ºC
150ºC
15 20 25 30 35 40 45
IC - Amperes
50
10,000
f = 1 MHz
Fig. 9. Capacitance
1,000
Cies
16
14 VCE = 325V
IC = 20A
12 IG = 10mA
Fig. 8. Gate Charge
10
8
6
4
2
0
0 4 8 12 16 20 24 28 32
QG - NanoCoulombs
Fig. 10. Reverse-Bias Safe Operating Area
40
30
Coes
100
10
0
Cres
5 10 15 20 25 30 35 40
VCE - Volts
20
10 TJ = 150ºC
RG = 20Ω
dv / dt < 10V / ns
0
100 200 300 400 500 600 700
VCE - Volts
Fig. 11. Forward-Bias Safe Operating Area
1000
Fig. 12. Maximum Transient Thermal Impedance
10
VCE(sat) Limit
100
1
10
25µs
100µs
1
0.1 TJ = 175ºC
TC = 25ºC
Single Pulse
1ms
10ms
100ms
1s
DC
0.1
0.01
1
10
VDS - Volts
100
1000
0.01
0.00001
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.0001
0.001
0.01
0.1
1
Pulse Width - Seconds
10 100
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
IXYP20N65C3D1 | IGBT ( Insulated Gate Bipolar Transistor ) | IXYS |
IXYP20N65C3D1M | IGBT ( Insulated Gate Bipolar Transistor ) | IXYS |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |