|
|
PDF IXYT30N65C3H1HV Data sheet ( Hoja de datos )
| Número de pieza | IXYT30N65C3H1HV | |
| Descripción | IGBT | |
| Fabricantes | IXYS | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IXYT30N65C3H1HV (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
Preliminary Technical Information
XPTTM 650V IGBT
GenX3TM w/ Sonic
Diode
Extreme Light Punch Through
IGBT for 20-60kHz Switching
IXYT30N65C3H1HV
IXYH30N65C3H1
VCES = 650V
IC110 = 30A
VCE(sat) 2.7V
tfi(typ) = 24ns
TO-268HV
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
IF110
ICM
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
TC = 25°C
TTCC
= 110°C
= 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 10
Clamped Inductive Load
VGE = 15V, VCE = 360V, TJ = 150°C
RG = 82, Non Repetitive
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
TO-220
TO-247
Maximum Ratings
650 V
650 V
±20 V
±30 V
60 A
30 A
29 A
118 A
10 A
300 mJ
ICM = 60
VCE VCES
8
A
μs
270
-55 ... +175
175
-55 ... +175
300
260
1.13/10
4
6
W
°C
°C
°C
°C
°C
Nm/lb.in
g
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC
=
30A,
VGE
=
15V,
Note
1
TJ
=
150C
Characteristic Values
Min. Typ. Max.
650 V
3.5 6.0 V
50 A
4 mA
100 nA
2.35
2.58
2.70 V
V
G
E
C (Tab)
TO-247 AD
G
CE
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
Optimized for 20-60kHz Switching
Square RBSOA
High Voltage
Avalanche Rated
Short Circuit Capability
Anti-Parallel Sonic Diode
Advantages
High Power Density
Extremely Rugged
Low Gate Drive Requirement
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
High Frequency Power Inverters
© 2014 IXYS CORPORATION, All Rights Reserved
DS100545A(7/14)
1 page  
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
2.4
Eoff Eon - - - -
2.0 TJ = 150ºC , VGE = 15V
VCE = 400V
1.6
I C = 60A
1.2
12
10
8
6
0.8 4
0.4 2
I C = 30A
0.0 0
10 20 30 40 50 60 70 80
RG - Ohms
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
1.4
Eoff Eon - - - -
1.2 RG = 10Ω , VGE = 15V
VCE = 400V
1.0
7
6
5
0.8 I C = 60A
4
0.6 3
0.4 2
0.2
0.0
25
IC = 30A
50 75 100
TJ - Degrees Centigrade
125
1
0
150
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
70 160
60
t f i td(off) - - - -
RG = 10Ω , VGE = 15V
VCE = 400V
50
140
120
40
TJ = 150ºC
100
30 80
20 TJ = 25ºC
60
10 40
0 20
15 20 25 30 35 40 45 50 55 60
IC - Amperes
© 2014 IXYS CORPORATION, All Rights Reserved
IXYT30N65C3H1HV
IXYH30N65C3H1
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
1.2
Eoff Eon - - - -
1.0 RG = 10Ω , VGE = 15V
VCE = 400V
0.8
6
5
4
0.6
TJ = 150ºC
0.4
3
2
0.2 1
TJ = 25ºC
0.0
15 20 25 30 35 40 45 50 55
IC - Amperes
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
80
t f i td(off) - - - -
70 TJ = 150ºC, VGE = 15V
VCE = 400V
60
0
60
350
300
250
50
I C = 60A
40
30
I C = 30A
200
150
100
20 50
10 20 30 40 50 60 70 80
RG - Ohms
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
80
70 t f i
td(off) - - - -
RG = 10Ω , VGE = 15V
60 VCE = 400V
50
40 I C = 60A
I C = 30A
30
100
95
90
85
80
75
20 70
10 65
0 60
25 50 75 100 125 150
TJ - Degrees Centigrade
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXYT30N65C3H1HV.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IXYT30N65C3H1HV | IGBT | IXYS |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |