IXYX100N120C3 Datasheet PDF - IXYS
| Part Number | IXYX100N120C3 | |
| Description | IGBT ( Insulated Gate Bipolar Transistor ) | |
| Manufacturers | IXYS | |
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There is a preview and IXYX100N120C3 download ( pdf file ) link at the bottom of this page. Total 6 Pages | ||
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1200V XPTTM IGBTs
GenX3TM
High-Speed IGBT
for 20-50 kHz Switching
Preliminary Technical Information
IXYK100N120C3
IXYX100N120C3
VCES =
IC110 =
V ≤CE(sat)
tfi(typ) =
1200V
100A
3.5V
110ns
TO-264 (IXYK)
Symbol
VCES
VCGR
VGES
VGEM
IC25
ILRMS
IC110
ICM
IA
EAS
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
FC
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1MΩ
Continuous
Transient
1200
1200
±20
±30
V
V
V
V
TC = 25°C (Chip Capability)
Terminal Current Limit
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 1Ω
Clamped Inductive Load
TC = 25°C
188
160
100
490
50
1.2
ICM = 200
≤@VCE VCES
1150
-55 ... +175
175
-55 ... +175
A
A
A
A
A
J
A
W
°C
°C
°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300 °C
260 °C
Mounting Torque (TO-264)
Mounting Force (PLUS247)
1.13/10
20..120 /4.5..27
Nm/lb.in.
N/lb.
TO-264
PLUS247
10 g
6g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC
=
IC110,
VGE
=
15V,
Note
1
TJ
=
150°C
Characteristic Values
Min. Typ. Max.
1200
V
3.0 5.0 V
25 μA
1.25 mA
±100 nA
2.9 3.5 V
4.1 V
G
C
E
PLUS247 (IXYX)
Tab
G
G
C
E
Tab
G = Gate
C = Collector
E = Emitter
Tab = Collector
Features
z Optimized for Low Switching Losses
z Square RBSOA
z Positive Thermal Coefficient of
Vce(sat)
z Avalanche Rated
z High Current Handling Capability
z International Standard Packages
Advantages
z High Power Density
z Low Gate Drive Requirement
Applications
z High Frequency Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
© 2013 IXYS CORPORATION, All Rights Reserved
DS100404A(03/13)
|
| |
 
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
8
7 Eoff
Eon - - - -
TJ = 125ºC , VGE = 15V
6 VCE = 600V
5 I C = 100A
4
3
2 I C = 50A
1
0
123456789
RG - Ohms
16
14
12
10
8
6
4
2
0
10
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
4.5
Eoff Eon - - - -
4.0 RG = 1Ω , VGE = 15V
VCE = 600V
3.5
I C = 100A
3.0
14
12
10
8
2.5 6
2.0 4
I C = 50A
1.5 2
1.0
25
50 75
TJ - Degrees Centigrade
100
0
125
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
170 220
t f i td(off) - - - -
150 RG = 1Ω , VGE = 15V
VCE = 600V
130
200
180
110
TJ = 125ºC
160
90
TJ = 25ºC
70
140
120
50 100
50 55 60 65 70 75 80 85 90 95 100
IC - Amperes
IXYK100N120C3
IXYX100N120C3
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
4.5
Eoff Eon - - - -
4.0 RG = 1Ω , VGE = 15V
VCE = 600V
3.5
TJ = 125ºC
3.0
14
12
10
8
2.5 6
2.0
TJ = 25ºC
4
1.5 2
1.0 0
50 55 60 65 70 75 80 85 90 95 100
IC - Amperes
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
160
t f i td(off) - - - -
140 TJ = 125ºC, VGE = 15V
VCE = 600V
500
400
120
I C = 100A
100
I C = 50A
300
200
80 100
60 0
1 2 3 4 5 6 7 8 9 10
RG - Ohms
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
170
t f i td(off) - - - -
150 RG = 1Ω , VGE = 15V
VCE = 600V
130
220
200
180
110 160
I C = 50A, 100A
90 140
70 120
50
25
50 75 100
TJ - Degrees Centigrade
100
125
© 2013 IXYS CORPORATION, All Rights Reserved
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| Information | Total 6 Pages | |
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