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PDF IXYP20N65B3 Data sheet ( Hoja de datos )
| Número de pieza | IXYP20N65B3 | |
| Descripción | IGBT | |
| Fabricantes | IXYS | |
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Advance Technical Information
XPTTM 650V IGBT
GenX3TM
Extreme Light Punch Through
IGBT for 5-30kHz Switching
IXYA20N65B3
IXYP20N65B3
IXYH20N65B3
VCES = 650V
IC110 = 20A
VCE(sat) 2.10V
tfi(typ) = 87ns
TO-263 (IXYA)
Symbol
VCES
VCGR
VGES
VGEM
IICC12150
ICM
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
FC
Md
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
650 V
650 V
±20 V
±30 V
TTCC
= 25°C
= 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 20
Clamped Inductive Load
VGE = 15V, VCE = 360V, TJ = 150°C
RG = 82, Non Repetitive
TC = 25°C
58
20
108
10
200
ICM = 40
@VCE VCES
5
230
-55 ... +175
175
-55 ... +175
A
A
A
A
mJ
A
μs
W
°C
°C
°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300 °C
260 °C
Mounting Force (TO-263)
Mounting Torque (TO-247 & TO-220)
10..65 / 2.2..14.6
1.13 / 10
N/lb
Nm/lb.in
TO-263
TO-220
TO-247
2.5 g
3.0 g
6.0 g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC
=
20A,
VGE
=
15V,
Note
1
TJ
=
150C
Characteristic Values
Min. Typ. Max.
650 V
3.5 6.0 V
10 A
150 A
100 nA
1.77
2.05
2.10 V
V
G
E
TO-220 (IXYP)
C (Tab)
GC E
C (Tab)
TO-247 AD (IXYH)
G
CE
G = Gate
E = Emitter
C (Tab)
C = Collector
Tab = Collector
Features
Optimized for 5-30kHz Switching
Square RBSOA
Avalanche Rated
Short Circuit Capability
International Standard Packages
Advantages
High Power Density
Extremely Rugged
Low Gate Drive Requirement
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2015 IXYS CORPORATION, All Rights Reserved
DS100644(02/15)
1 page  
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
2.2 5.0
2.0 Eoff
Eon - - - -
1.8 TJ = 150ºC , VGE = 15V
VCE = 400V
1.6
4.5
4.0
3.5
1.4
I C = 40A
1.2
3.0
2.5
1.0 2.0
0.8 1.5
0.6 I C = 20A
1.0
0.4 0.5
20 30 40 50 60 70 80 90 100
RG - Ohms
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
1.6
1.4 Eoff
Eon - - - -
RG = 20Ω , VGE = 15V
1.2 VCE = 400V
1.0
I C = 40A
3.2
2.8
2.4
2.0
0.8 1.6
0.6 1.2
0.4
IC = 20A
0.8
0.2 0.4
0.0
25
50 75 100
TJ - Degrees Centigrade
125
0.0
150
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
240 210
t f i td(off) - - - -
200
RG = 20Ω , VGE = 15V
180
VCE = 400V
160 150
TJ = 150ºC
120 120
80 90
TJ = 25ºC
40 60
0 30
10 15 20 25 30 35 40
IC - Amperes
© 2015 IXYS CORPORATION, All Rights Reserved
IXYA20N65B3 IXYP20N65B3
IXYH20N65B3
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
1.6
1.4 Eoff
Eon - - - -
RG = 20Ω , VGE = 15V
1.2 VCE = 400V
TJ = 150ºC
1.0
3.2
2.8
2.4
2.0
0.8 1.6
0.6 1.2
0.4
TJ = 25ºC
0.8
0.2 0.4
0.0 0.0
10 15 20 25 30 35 40
IC - Amperes
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
200
180 t f i
td(off) - - - -
TJ = 150ºC, VGE = 15V
160 VCE = 400V
420
360
300
140
I C = 20A
120
I C = 40A
100
240
180
120
80 60
60 0
20 30 40 50 60 70 80 90 100
RG - Ohms
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
180 140
t f i td(off) - - - -
160 RG = 20Ω , VGE = 15V
VCE = 400V
140
I C = 20A
130
120
120 110
100 100
I C = 40A
80 90
60
25
50 75 100 125
TJ - Degrees Centigrade
80
150
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXYP20N65B3.PDF ] | |
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