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PDF IXYP50N65C3 Data sheet ( Hoja de datos )
| Número de pieza | IXYP50N65C3 | |
| Descripción | IGBT | |
| Fabricantes | IXYS | |
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Preliminary Technical Information
XPTTM 650V IGBT
GenX3TM
Extreme Light Punch Through
IGBT for 20-60kHz Switching
IXYA50N65C3
IXYP50N65C3
IXYH50N65C3
VCES = 650V
IC110 = 50A
VCE(sat) 2.10V
tfi(typ) = 26ns
TO-263 (IXYA)
Symbol
VCES
VCGR
VGES
VGEM
IICC12150
ICM
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
FC
Md
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
650 V
650 V
±20 V
±30 V
TTCC
= 25°C
= 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 5
Clamped Inductive Load
VGE = 15V, VCE = 360V, TJ = 150°C
RG = 82, Non Repetitive
TC = 25°C
132
50
250
25
400
ICM = 100
VCE VCES
8
600
-55 ... +175
175
-55 ... +175
A
A
A
A
mJ
A
μs
W
°C
°C
°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300 °C
260 °C
Mounting Force (TO-263)
Mounting Torque (TO-247 & TO-220)
10..65 / 2.2..14.6
1.13 / 10
N/lb
Nm/lb.in
TO-263
TO-220
TO-247
2.5 g
3.0 g
6.0 g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC
=
36A,
VGE
=
15V,
Note
1
TJ
=
150C
Characteristic Values
Min. Typ. Max.
650 V
3.5 6.0 V
15 A
250 A
100 nA
1.73
2.10
2.10 V
V
G
E
TO-220 (IXYP)
C (Tab)
GC E
C (Tab)
TO-247 AD (IXYH)
G
CE
G = Gate
E = Emitter
C (Tab)
C = Collector
Tab = Collector
Features
Optimized for 20-60kHz Switching
Square RBSOA
Avalanche Rated
Short Circuit Capability
International Standard Packages
Advantages
High Power Density
Extremely Rugged
Low Gate Drive Requirement
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
High Frequency Power Inverters
© 2014 IXYS CORPORATION, All Rights Reserved
DS100552C(9/14)
1 page  
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
3.2
2.8 Eoff
Eon - - - -
TJ = 150ºC , VGE = 15V
2.4 VCE = 400V
2.0 I C = 72A
1.6
8
7
6
5
4
1.2 3
0.8 2
I C = 36A
0.4 1
0.0
5
10 15 20 25 30 35 40 45 50
RG (Ω)
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
2.8
2.4
Eoff Eon - - - -
RG = 5Ω , VGE = 15V
VCE = 400V
2.0
0
55
7
6
5
1.6 4
I C = 72A
1.2 3
0.8 2
0.4 1
IC = 36A
0.0 0
25 50 75 100 125 150
TJ (ºC)
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
90 200
80 t f i
td(off) - - - -
RG = 5Ω , VGE = 15V
70 VCE = 400V
180
160
60 140
50 TJ = 150ºC 120
40 100
30 80
TJ = 25ºC
20 60
10 40
15 20 25 30 35 40 45 50 55 60 65 70 75
IC (A)
© 2014 IXYS CORPORATION, All Rights Reserved
IXYA50N65C3 IXYP50N65C3
IXYH50N65C3
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
2.4
Eoff Eon - - - -
2.0 RG = 5Ω , VGE = 15V
VCE = 400V
1.6
6
5
4
1.2
0.8 TJ = 150ºC
3
2
0.4 1
TJ = 25ºC
0.0 0
15 20 25 30 35 40 45 50 55 60 65 70 75
IC (A)
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
120 480
100
t f i td(off) - - - -
TJ = 150ºC, VGE = 15V
VCE = 400V
80
400
320
60 I C = 72A
240
40 I C = 36A
160
20 80
00
5 10 15 20 25 30 35 40 45 50 55
RG (Ω)
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
120 160
t f i td(off) - - - -
100 RG = 5Ω , VGE = 15V
VCE = 400V
80
140
120
60 I C = 72A
100
40 I C = 36A
20
80
60
0 40
25 50 75 100 125 150
TJ (ºC)
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXYP50N65C3.PDF ] | |
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