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PDF IXYQ40N65C3D1 Data sheet ( Hoja de datos )
| Número de pieza | IXYQ40N65C3D1 | |
| Descripción | IGBT | |
| Fabricantes | IXYS | |
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Advance Technical Information
XPTTM 650V IGBT
GenX3TM w/ Diode
IXYH40N65C3D1
IXYQ40N65C3D1
Extreme Light Punch Through
IGBT for 20-60 kHz Switching
VCES = 650V
IC110 = 40A
VCE(sat) 2.35V
tfi(typ) = 20ns
TO-247 (IXYH)
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
IF110
ICM
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
TC = 25°C
TTCC
= 110°C
= 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE= 15V, TVJ = 150°C, RG = 10
Clamped Inductive Load
VGE= 15V, VCE = 360V, TJ = 150°C
RG = 82, Non Repetitive
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
TO-247
TO-3P
Maximum Ratings
650 V
650 V
±20 V
±30 V
80 A
40 A
50 A
180 A
20 A
300 mJ
ICM = 80
@VCE VCES
5
A
μs
300
-55 ... +175
175
-55 ... +175
300
260
1.13/10
6.0
5.5
W
°C
°C
°C
°C
°C
Nm/lb.in
g
g
G
CE
TO-3P (IXYQ)
Tab
G
C
E
G = Gate
E = Emitter
Tab
C = Collector
Tab = Collector
Features
Optimized for 20-60kHz Switching
Square RBSOA
Anti-Parallel Fast Diode
Avalanche Rated
Short Circuit Capability
Advantages
High Power Density
Extremely Rugged
Low Gate Drive Requirement
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC
=
40A,
VGE
=
15V,
Note
1
TJ
=
150C
Characteristic Values
Min. Typ. Max.
650 V
3.5 6.0 V
10 A
1.5 mA
100 nA
2.0 2.35 V
2.4 V
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
High Frequency Power Inverters
© 2014 IXYS CORPORATION, All Rights Reserved
DS100625(8/14)
1 page  
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
2.0
1.8 Eoff
Eon - - - -
1.6 TJ = 150ºC , VGE = 15V
VCE = 400V
1.4
I C = 60A
1.2
1.0
0.8
I C = 30A
0.6
0.4
0.2
10 15 20 25 30 35 40 45 50
RG (Ω)
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
1.6
1.4 Eoff
Eon - - - -
RG = 10Ω , VGE = 15V
1.2 VCE = 400V
9
8
7
6
5
4
3
2
1
0
55
4.5
4.0
3.5
1.0
I C = 60A
0.8
3.0
2.5
0.6 2.0
0.4
IC = 30A
0.2
1.5
1.0
0.0 0.5
25 50 75 100 125 150
TJ (ºC)
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
80 200
70
tfi
td(off) - - - -
180
RG = 10Ω , VGE = 15V
60
VCE = 400V
160
50 140
TJ = 150ºC
40 120
30 100
TJ = 25ºC
20 80
10 60
0 40
15 20 25 30 35 40 45 50 55 60
IC (A)
© 2014 IXYS CORPORATION, All Rights Reserved
IXYH40N65C3D1
IXYQ40N65C3D1
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
2.0
Eoff Eon - - - -
1.6 RG = 10Ω , VGE = 15V
VCE = 400V
5
4
1.2
TJ = 150ºC
0.8
3
2
0.4
TJ = 25ºC
1
0.0
15 20 25 30 35 40 45 50 55
IC (A)
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
90
80 t f i
td(off) - - - -
TJ = 150ºC, VGE = 15V
70 VCE = 400V
0
60
400
360
320
60
I C = 60A
50
280
240
40
I C = 30A
200
30 160
20 120
10 80
10 15 20 25 30 35 40 45 50 55
RG (Ω)
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
80 150
70 t f i
td(off) - - - -
RG = 10Ω , VGE = 15V
VCE = 400V
60
140
130
50 120
40
I C = 30A, 60A
30
110
100
20 90
10 80
25 50 75 100 125 150
TJ (ºC)
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IXYQ40N65C3D1.PDF ] | |
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