IXYX140N90C3 Datasheet PDF - IXYS
| Part Number | IXYX140N90C3 | |
| Description | IGBT ( Insulated Gate Bipolar Transistor ) | |
| Manufacturers | IXYS | |
| Logo |  |
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There is a preview and IXYX140N90C3 download ( pdf file ) link at the bottom of this page. Total 6 Pages | ||
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XPTTM 900V IGBTs
GenX3TM
High-Speed IGBTs
for 20-50 kHz Switching
IXYK140N90C3
IXYX140N90C3
VCES =
IC110 =
V ≤CE(sat)
tfi(typ) =
900V
140A
2.7V
105ns
TO-264 (IXYK)
Symbol
VCES
VCGR
VGES
VGEM
IC25
ILRMS
IC110
ICM
IA
EAS
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
FC
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1MΩ
Continuous
Transient
900 V
900 V
±20 V
±30 V
TC = 25°C (Chip Capability)
Terminal Current Limit
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 1Ω
Clamped Inductive Load
TC = 25°C
310
160
140
840
70
1
ICM = 280
≤@VCE VCES
1630
-55 ... +175
175
-55 ... +175
A
A
A
A
A
J
A
W
°C
°C
°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300 °C
260 °C
Mounting Torque (TO-264)
Mounting Force (PLUS247)
1.13/10
20..120 /4.5..27
Nm/lb.in.
N/lb.
TO-264
PLUS247
10 g
6g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC = IC110, VGE = 15V, Note 1
TJ = 150°C
Characteristic Values
Min. Typ. Max.
950 V
3.5 5.5 V
25 μA
1.25 mA
±100 nA
2.15
2.85
2.70 V
V
G
C
E
PLUS247 (IXYX)
Tab
G
G
C
E
Tab
G = Gate
C = Collector
E = Emitter
Tab = Collector
Features
z Optimized for Low Switching Losses
z Square RBSOA
z International Standard Packages
z Positive Thermal Coefficient of
Vce(sat)
z Avalanche Rated
z High Current Handling Capability
Advantages
z High Power Density
z Low Gate Drive Requirement
Applications
z High Frequency Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
© 2013 IXYS CORPORATION, All Rights Reserved
DS100450B(02/13)
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Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
8
Eoff Eon - - - -
7 TJ = 150ºC , VGE = 15V
VCE = 450V
6
I C = 100A
5
9
8
7
6
45
34
23
I C = 50A
12
1 2 3 4 5 6 7 8 9 10
RG - Ohms
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
8
7 Eoff
Eon - - - -
RG = 1Ω , VGE = 15V
6 VCE = 450V
5 I C = 100A
4
3
2 I C = 50A
1
0
25 50 75 100 125
TJ - Degrees Centigrade
8
7
6
5
4
3
2
1
0
150
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
250 260
225 t f i td(off) - - - - 240
RG = 1Ω , VGE = 15V
200
VCE = 450V
220
175 TJ = 150ºC
200
150 180
125 160
100
TJ = 25ºC
140
75 120
50 100
50 55 60 65 70 75 80 85 90 95 100
IC - Amperes
IXYK140N90C3
IXYX140N90C3
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
6
Eoff Eon - - - -
5 RG = 1Ω , VGE = 15V
VCE = 450V
4
TJ = 150ºC
3
10
8
6
4
2 TJ = 25ºC 2
10
50 55 60 65 70 75 80 85 90 95 100
IC - Amperes
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
260 340
240 t f i
td(off) - - - -
220 TJ = 150ºC, VGE = 15V
VCE = 450V
200
I C = 50A
180
320
300
280
260
160 240
140 220
120
I C = 100A
200
100 180
80 160
60 140
1 2 3 4 5 6 7 8 9 10
RG - Ohms
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
200 260
180
t f i td(off) - - - -
RG = 1Ω , VGE = 15V
VCE = 450V
160
240
220
140 I C = 50A
200
120 180
100 160
I C = 100A
80 140
60
25
50 75 100 125
TJ - Degrees Centigrade
120
150
© 2013 IXYS CORPORATION, All Rights Reserved
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