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PDF IXYT20N120C3D1HV Data sheet ( Hoja de datos )
| Número de pieza | IXYT20N120C3D1HV | |
| Descripción | IGBT | |
| Fabricantes | IXYS | |
| Logotipo |  |
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1200V XPTTM IGBT
GenX3TM w/ Diode
High-Speed IGBT
for 20-50 kHz Switching
IXYT20N120C3D1HV
VCES = 1200V
IC110 = 17A
VCE(sat) 3.4V
tfi(typ) = 108ns
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
IF110
ICM
IA
EAS
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1M
Continuous
Transient
TC = 25°C
TTCC
= 110°C
= 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 10
Clamped Inductive Load
TC = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Maximum Ratings
1200
1200
V
V
±20 V
±30 V
36 A
17 A
20 A
88 A
10 A
400 mJ
ICM = 40
@VCE VCES
230
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
260 °C
4g
TO-268HV
G
E
C (Tab)
G = Gate
E = Emitter
C = Collector
Tab = Collector
Features
Optimized for Low Switching Losses
Square RBSOA
Positive Thermal Coefficient of
Vce(sat)
High Voltage Package
Anti-Parallel Ultra Fast Diode
Avalanche Rated
Advantages
High Power Density
Low Gate Drive Requirement
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250A, VGE = 0V
VGE(th)
IC = 250A, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 125C
IGES VCE = 0V, VGE = 20V
VCE(sat)
IC
=
20A,
VGE
=
15V,
Note
1
TJ
=
150C
Characteristic Values
Min. Typ. Max.
1200
V
3.0 5.0 V
25 A
350 μA
100 nA
3.4 V
4.0 V
Applications
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2013 IXYS CORPORATION, All Rights Reserved
DS100514B(8/13)
1 page  
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
2
Eoff Eon - - - -
1.6 TJ = 150ºC , VGE = 15V
VCE = 600V
1.2 I C = 40A
0.8
I C = 20A
0.4
20
16
12
8
4
0
10 15 20 25 30 35 40 45 50
RG - Ohms
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
1.4
Eoff Eon - - - -
1.2 RG = 10Ω , VGE = 15V
VCE = 600V
1.0
I C = 40A
0.8
0
55
12
10
8
6
0.6 4
IC = 20A
0.4 2
0.2
25
50 75 100 125
TJ - Degrees Centigrade
0
150
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
140 130
t f i td(off) - - - -
120
RG = 10Ω , VGE = 15V
120
VCE = 600V
100 TJ = 150ºC
110
80
60 TJ = 25ºC
100
90
40 80
20 70
20 22 24 26 28 30 32 34 36 38 40
IC - Amperes
IXYT20N120C3D1HV
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
1.4
Eoff Eon - - - -
1.2 RG = 10Ω , VGE = 15V
VCE = 600V
1.0
TJ = 150ºC
0.8
12
10
8
6
0.6 4
TJ = 25ºC
0.4 2
0.2 0
20 22 24 26 28 30 32 34 36 38 40
IC - Amperes
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
180 360
160 t f i
td(off) - - - -
TJ = 150ºC, VGE = 15V
140 VCE = 600V
320
280
120 240
100
I C = 20A
80
60
I C = 40A
200
160
120
40 80
20 40
10 15 20 25 30 35 40 45 50 55
RG - Ohms
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
160 140
140 t f i
td(off) - - - -
RG = 10Ω , VGE = 15V
120 VCE = 600V
100
I C = 20A
130
120
110
80 100
60 90
I C = 40A
40 80
20
25
50 75 100 125
TJ - Degrees Centigrade
70
150
© 2013 IXYS CORPORATION, All Rights Reserved
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IXYT20N120C3D1HV.PDF ] | |
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