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PDF MCP1631 Data sheet ( Hoja de datos )

Número de pieza MCP1631
Descripción Pulse Width Modulator
Fabricantes Microchip 
Logotipo Microchip Logotipo



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MCP1631/HV/MCP1631V/VHV
High-Speed, Pulse Width Modulator
Features
• Programmable Switching Battery Charger
Designs
• High-Speed Analog PWM Controller (2 MHz
Operation)
• Combine with Microcontroller for “Intelligent”
Power System Development
• Peak Current Mode Control (MCP1631)
• Voltage Mode Control (MCP1631V)
• High Voltage Options Operate to +16V Input:
- MCP1631HV Current Mode
- MCP1631VHV Voltage Mode
• Regulated Output Voltage Options:
- +5.0V or +3.3V
- 250 mA maximum current
• External Oscillator Input sets Switching
Frequency and Maximum Duty Cycle Limit
• External Reference Input Sets Regulation Voltage
or Current
• Error Amplifier, Battery Current ISNS Amplifier,
Battery Voltage VSNS Amplifier Integrated
• Integrated Overvoltage Comparator
• Integrated High Current Low Side MOSFET
Driver (1A Peak)
• Shutdown mode reduces IQ to 2.4 µA (typical)
• Internal Overtemperature Protection
• Undervoltage Lockout (UVLO)
• Package Options:
- 4 mm x 4 mm 20-Lead QFN
(MCP1631/MCP1631V only)
- 20-Lead TSSOP (All Devices)
- 20-Lead SSOP (All Devices)
Applications
• High Input Voltage Programmable Switching
Battery Chargers
• Supports Multiple Chemistries Li-Ion, NiMH, NiCd
Intelligent and Pb-Acid
• LED Lighting Applications
• Constant Current SEPIC Power Train Design
• USB Input Programmable Switching Battery
Chargers
General Description
The MCP1631/MCP1631V is a high-speed microcon-
troller based pulse width modulator (PWM) used to
develop intelligent power systems. When combined
with a microcontroller, the MCP1631/MCP1631V will
control the power system duty cycle providing output
voltage or current regulation. The microcontroller can
be used to adjust output voltage or current, switching
frequency and maximum duty cycle while providing
additional features making the power system more
intelligent, robust and adaptable.
Typical applications for the MCP1631/MCP1631V
include programmable switch mode battery chargers
capable of charging multiple chemistries, like Li-Ion,
NiMH, NiCd and Pb-Acid configured as single or
multiple cells. By combining with a small microcontrol-
ler, intelligent LED lighting designs and programmable
SEPIC topology voltage and current sources can also
be developed.
The MCP1631/MCP1631V inputs were developed to
be attached to the I/O pins of a microcontroller for
design flexibility. Additional features integrated into the
MCP1631HV/MCP1631VHV provide signal condition-
ing and protection features for battery charger or
constant current source applications.
For applications that operate from a high voltage input,
the MCP1631HV and MCP1631VHV device options
can be used to operate directly from a +3.5V to +16V
input. For these applications, an additional low drop out
+5V or +3.3V regulated output is available and can
provide current up to 250 mA to power a microcontrol-
ler and auxiliary circuits.
© 2007 Microchip Technology Inc.
DS22063A-page 1

1 page




MCP1631 pdf
MCP1631/HV/MCP1631V/VHV
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
VIN - GND (MCP1631/V)................................................+6.5V
VIN - GND (MCP1631HV/VHV)....................................+18.0V
All Other I/O ..............................(GND - 0.3V) to (VDD + 0.3V)
LX to GND............................................. -0.3V to (VDD + 0.3V)
VEXT Output Short Circuit Current ........................ Continuous
Storage temperature .....................................-65°C to +150°C
Maximum Junction Temperature ...................-40°C to +150°C
Operating Junction Temperature...................-40°C to +125°C
ESD Protection On All Pins:
HBM ................................................................................. 4 kV
MM ..................................................................................400V
Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational sections of this specifica-
tion is not intended. Exposure to maximum rating con-
ditions for extended periods may affect device
reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, VIN = 3.0V to 5.5V, FOSC = 1 MHz with 10% Duty Cycle, CIN = 0.1 µF,
VDD for typical values = 5.0V, TA for typical values = +25°C, TA = -40°C to +125°C for all minimum and maximums.
Parameters
Sym
Min Typ Max Units
Conditions
Input Characteristics
Input Voltage (MCP1631/V)
Input Voltage
(MCP1631HV/VHV)
VDD 3.0 — 5.5 V Non-HV Options
VDD 3.5 — 16.0 V HV Options (Note 2)
Undervoltage Lockout
(MCP1631/V)
UVLO 2.7 2.8 3.0 V VIN Falling, VEXT low when input
below UVLO threshold
Undervoltage Lockout Hysteresis UVLO_HYS
(MCP1631/MCP1631V)
40
64 100 mV UVLO Hysteresis
Input Quiescent Current
I(VIN) — 3.7 5 mA SHDN = VDD =OSCDIS
(MCP1631/V, MCP1631HV,VHV)
Shutdown Current
I_AVDD for MCP1631/V
I_VIN for MCP1631HV/VHV
IIN_SHDN
SHDN = GND =OSCDIS,
2.4 12 µA Note: Amplifier A3 remains pow-
4.4 17 µA ered during Shutdown.
OSCIN, OSCDIS and SHDN Input Levels
Low Level Input Voltage
VIL
High Level Input Voltage
VIH
Input Leakage Current
ILEAK
External Oscillator Range
FOSC
— — 0.8 V
2.0 — — V
0.005 1 µA
— — 2 MHz Max. operating frequency is
dependent upon circuit topology
and duty cycle.
Min. Oscillator High Time
Min. Oscillator Low Time
TOH_MIN.
TOL_MIN.
10 — ns
Oscillator Rise and Fall Time
TR and TF
0.01
10 µs Note 1
Oscillator Input Capacitance
COSC
5 — pf
Note 1: External Oscillator Input (OSCIN) rise and fall times between 10 ns and 10 µs were determined during device
characterization testing. Signal levels between 0.8V and 2.0V with rise and fall times measured between 10% and 90%
of maximum and minimum values. Not production tested. Additional timing specifications were fully characterized and
specified that are not production tested.
2: The minimum VIN must meet two conditions: VIN 3.5V and VIN (VOUT(MAX) + VDROPOUT(MAX)).
3: TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * ΔTemperature), VOUT-HIGH = highest voltage measured over the
temperature range. VOUT-LOW = lowest voltage measured over the temperature range.
4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCVOUT.
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with an applied input voltage of VOUT(MAX) + VDROPOUT(MAX) or 3.5V, whichever is greater.
© 2007 Microchip Technology Inc.
DS22063A-page 5

5 Page





MCP1631 arduino
MCP1631/HV/MCP1631V/VHV
Typical Performance Curves (Continued)
Note: Unless otherwise noted, VIN = 3.0V to 5.5V, FOSC = 1 MHz with 10% Duty Cycle, CIN = 0.1 µF,
VIN for typical values = 5.0V, TA for typical values = +25°C.
18.8
17.6
16.4
15.2
14.0
12.8
11.6
10.4
9.2
8.0
VDD = +3.0V
VDD = +3.3V
VDD = +4.0V
VDD = +5.0V
VDD = +5.5V
Ambient Temperature (°C)
FIGURE 2-13:
Amplifier A1 Sink Current
vs. Temperature.
18
16
14 VDD = +5.5V
12 VDD = +5.0V
10 VDD = +4.0V
8
6 VDD = +3.3V
VDD = +3.0V
4
Ambient Temperature (°C)
FIGURE 2-16:
Amplifier A2 Output Voltage
Low vs. Temperature.
14.0
12.5
VDD = +5.0V
11.0
VDD = +4.0V
9.5
8.0
6.5 VDD = +3.3V
5.0
VDD = +5.5V
VDD = +3.0V
Ambient Temperature (°C)
FIGURE 2-14:
Amplifier A1 Source Current
vs. Temperature.
40
35
30
VDD = +3.0V
25
20
VDD = +5.0V
15
10
VDD = +3.3V
VDD = +4.0V
VDD = +5.5V
Ambient Temperature (°C)
FIGURE 2-17:
Amplifier A2 Sink Current
vs. Temperature.
1.6
VDD = +5.5V
1.4
1.2
1.0
VDD = +4.0V
VDD = +5.0V
0.8
0.6 VDD = +3.3V
0.4
VDD = +3.0V
Ambient Temperature (°C)
FIGURE 2-15:
Amplifier A2 Offset Voltage
vs. Temperature.
26
24
22
20
18 VDD = +5.0V
VDD = +3.3V
16 VDD = +5.5V
14 VDD = +3.0V
12
10
Ambient Temperature (°C)
FIGURE 2-18:
Amplifier A2 Source Current
vs. Temperature.
© 2007 Microchip Technology Inc.
DS22063A-page 11

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