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PDF MCP2003B Data sheet ( Hoja de datos )

Número de pieza MCP2003B
Descripción LIN Transceiver
Fabricantes Microchip 
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MCP2003B
LIN Transceiver
Features
• The MCP2003B is Compliant with Local
Interconnect Network (LIN) Bus Specifications
1.3, 2.0, 2.1, 2.2, SAE J2602, and ISO17987
• Supports Baud Rates up to 20 Kbaudwith
LIN-Compatible Output Driver
• 60V Load Dump Protected
• Very High Electromagnetic Immunity (EMI) Meets
Stringent Original Equipment Manufacturers
(OEM) Requirements
• Direct Capacitor Coupling Robustness without
Transient Voltage Suppressor (TVS):
- ±35V on LBUS (SAE J2962-1)
- ±85V on LBUS (SAE J2962-1)
• High Electrostatic Discharge (ESD)
Immunity without TVS:
- >25 kV on LBUS (SAE J2962-1)
- >15 kV on VBB (IEC 61000-4-2)
- >6 kV on LBUS (IEC 61000-4-2)
• Very High Immunity to RF Disturbances Meets
Stringent OEM Requirements
• Wide Supply Voltage: 5.5V – 30.0V Continuous
• Extended (E) Temperature Range: -40°C to +125°C
• High (H) Temperature Range: -40°C to +150°C
• Interfaces to PIC® MCU EUSART and Standard
USARTs
• LIN Bus Pin:
- Internal pull-up resistor and diode
- Protected against battery shorts
- Protected against loss of ground
- High current drive: >40 mA
• Automatic Thermal Shutdown
• Low-Power Mode:
- Receiver monitoring bus and transmitter off:
(5 µA)
Description
This device provides a bidirectional, half-duplex
communication, physical interface to automotive and
industrial LIN systems to meet the LIN Bus
Specification Revision 2.2, SAE J2602, and ISO
17987. The device is both short-circuit and
overtemperature protected by internal circuitry. The
device has been specifically designed to operate in the
automotive operating environment and will survive all
specified transient conditions while meeting all of the
stringent quiescent current requirements.
Package Types
MCP2003B
SOIC
RXD 1
CS 2
WAKE 3
TXD 4
8 VREN
7 VBB
6 LBUS
5 VSS
MCP2003B
2x3 DFN*
RXD 1
8 VREN
CS 2 EP 7 VBB
WAKE 3 9 6 LBUS
TXD 4
5 VSS
MCP2003B
3x3 DFN*
RXD 1
8 VREN
CS 2 EP 7 VBB
WAKE 3 9 6 LBUS
TXD 4
5 VSS
* Includes Exposed Thermal Pad (EP); see Table 1-2.
2015-2016 Microchip Technology Inc.
DS20005463C-page 1

1 page




MCP2003B pdf
MCP2003B
FIGURE 1-2:
OPERATIONAL MODES STATE DIAGRAM – MCP2003B
POR
VREN OFF
RX OFF
TX OFF
RPU switch OFF
VBAT > VBBUV_RISE
Ready Mode
VREN ON
RX ON
TX OFF
RPU switch OFF
Rising Edge on LBUS or
CS = 1 or
Falling Edge on WAKE pin
TOFF Mode
VREN ON
RX ON
TX OFF
RPU switch OFF
TXD = 1 And CS = 1
NO Fault,
And RXD > 2.5V while LBUS recessive(1)
Fault:
Thermal or Timer
Operation Mode
VREN ON
RX ON
TX ON
RPU switch ON
Power-Down
Mode
VREN OFF
RX OFF
TX OFF
RPU switch OFF
Note 1: Achieved via pull-up resistor on RXD (See Example 1-1)
TABLE 1-1: OVERVIEW OF OPERATIONAL MODES
State
Transmitter Receiver VREN
Operation
Comments
POR
OFF
Ready
Operation
OFF
ON
Power-Down
OFF
Transmitter
Off
OFF
OFF
ON
ON
Activity
Detect
ON
OFF
ON
ON
OFF
ON
Check CS: if low, then proceed to Ready mode;
If high, transition to either TOFF or Operation mode,
depending on TXD.
On CS high level, proceed to Operation or TOFF mode.
On CS low level, proceed to Power-Down.
On a fault condition, proceed to TOFF mode.
On CS high level, proceed to Ready mode then
proceed to either Operation or TOFF mode.
Falling edge on WAKE will put the device into
Ready mode.
Rising edge on LIN bus will put the device into
Ready mode.
On CS low level, proceed to Power-Down mode;
On TXD high and no fault condition, proceed to
Operation mode.
VBB > VBB(MIN) and
Internal Supply stable.
High ohmic pull-up resistor
enabled (900 ktypical).
Bus Off state.
High ohmic pull-up resistor
enabled (900 ktypical).
Normal Operation mode.
RXD has to be at a high
level (>2.5V typical) while
LBUS is recessive.
Low-Power mode.
High ohmic pull-up resistor
enabled (900 ktypical).
High ohmic pull-up resistor
enabled (900ktypical).
2015-2016 Microchip Technology Inc.
DS20005463C-page 5

5 Page





MCP2003B arduino
MCP2003B
2.3 DC Specifications (Continued)
DC Specifications
Electrical Characteristics: Unless otherwise indicated, all limits are specified for
VBB = 5.5V to 30.0V
Extended (E): TA = -40°C to +125°C
High (H): TA = -40°C to +150°C
Parameter
Sym.
Min.
Typ.
Max. Units
Conditions
Low-Level Input Current
IIL
-12 —
— µA Input voltage = 0.5V
(TXD)
High-Level Voltage (VREN)
VHVREN
-0.3 — VBB + 0.3 V
High-Level Output Current
(VREN)
IHVREN
-40
-120
-5 mA Output voltage = VBB - 0.5V
-20 Output voltage = VBB - 2.0V
High-Level Input Voltage
(CS)
VIH
2.0 — 30 V Through a current limiting
resistor
Low-Level Input Voltage VIL -0.3 — 0.8 V
(CS)
High-Level Input Current
(CS)
IIH
— — 10.0 µA Input voltage = 4.0V
Low-Level Input Current
(CS)
IIL
— — 7.0 µA Input voltage = 0.5V
Low-Level Input Voltage
(WAKE)
VIL VBB - 4.0V — — V
High-Level Input Current
(WAKE)
Low-Level Input Current
(WAKE)
Low-Level Output Voltage
(RXD)
IIH
IIL
VOL
-12 —
— µA
-15 —
-30 —
— µA VBB > 18V
— µA
-45 —
— µA VBB > 18V
— — 0.4 V IIN = 2 mA
Input Threshold Level
(RXD)
VTH(RXD) — 2.5 — V RXD > VTH;
LBUS recessive in
Operating mode
High-Level Output Current
(RXD)
IOH
-1 — -1 µA VLIN = VBB, VRXD = 5.5V
Bus Interface
High-Level Input Voltage
VIH(LBUS)
0.6 VBB
V Recessive state
Low-Level Input Voltage
VIL(LBUS)
-8
— 0.4 VBB V Dominant state
Input Hysteresis
VHYS
— — 0.175 VBB V VIH(LBUS) - VIL(LBUS)
Low-Level Output Current
IOL(LBUS)
40
200 mA Output voltage = 0.2 VBB,
VBB = 12V
16.5 —
— mA Output voltage = 0.2 VBB,
VBB = 18V
High-Level Output Current IOH(LBUS)
20 µA
Short-Circuit Current Limit
ISC
50 — 200 mA (Note 1)
High-Level Output Voltage VOH(LBUS) 0.8 VBB
VBB
V
Driver Dominant Voltage
V_LOSUP
1.2
V RLOAD = 500
Input Leakage Current
IBUS_PAS_DO
-1
-0.4
mA Driver off,
(at the receiver during
M
VBUS = 0V,
dominant bus level)
VBB = 12V
Note 1: Internal current limited. 2.0 ms maximum recovery time (RLBUS = 0, TX = 0.4 VREG, VLBUS = VBB).
2: Node has to sustain the current that can flow under this condition; bus must be operational under this
condition.
3: Characterized; not 100% tested.
2015-2016 Microchip Technology Inc.
DS20005463C-page 11

11 Page







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