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Advanced Power

Electronics Corp.

AP70T03GI

RoHS-compliant Product

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Fast Switching Performance

▼ Single Drive Requirement

D

▼ Full Isolation Package

G

S

Description

Advanced Power MOSFETs from APEC provide the designer with

the best combination of fast switching, ruggedized device design,

low on-resistance and cost-effectiveness.

The TO-220CFM isolation package is widely preferred for

commercial-industrial through hole applications.

BVDSS

RDS(ON)

ID

30V

9mΩ

60A

GD S

TO-220CFM(I)

Absolute Maximum Ratings

Symbol

Parameter

VDS

VGS

ID@TC=25℃

ID@TC=100℃

IDM

PD@TC=25℃

TSTG

TJ

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current, VGS @ 10V

Continuous Drain Current, VGS @ 10V

Pulsed Drain Current1

Total Power Dissipation

Storage Temperature Range

Operating Junction Temperature Range

Rating

30

±20

60

43

195

37.5

-55 to 175

-55 to 175

Thermal Data

Symbol

Parameter

Rthj-c

Maximum Thermal Resistance, Junction-case

Rthj-a

Maximum Thermal Resistance, Junction-ambient

Value

4.0

65

Units

V

V

A

A

A

W

℃

℃

Units

℃/W

℃/W

Data and specifications subject to change without notice

1

200805051

AP70T03GI

12

I D = 33 A

10

V DS =16V

8 V DS =20V

V DS =24V

6

4

2

0

0 4 8 12 16 20 24

Q G , Total Gate Charge (nC)

Fig 7. Gate Charge Characteristics

1000

100

100us

1ms

10

T C =25 o C

Single Pulse

1

0.1

1

10ms

100ms

1s

DC

10

V DS , Drain-to-Source Voltage (V)

100

Fig 9. Maximum Safe Operating Area

f=1.0MHz

10000

C iss

1000

C oss

C rss

100

1 5 9 13 17 21 25 29

V DS , Drain-to-Source Voltage (V)

Fig 8. Typical Capacitance Characteristics

1

Duty factor=0.5

0.2

0.1

0.1

0.05

0.01

0.02

0.01

Single Pulse

PDM

t

T

0.001

0.00001

0.31

Duty factor = t/T

Peak Tj = PDM x Rthjc + TC

trr

0.0001

0.001

0.01

0.1

t , Pulse Width (s)

Q1 10

rr

Fig 10. Effective Transient Thermal Impedance

VDS

90%

10%

VGS

td(on) tr

td(off) tf

VG

4.5V

QGS

QG

QGD

Charge

Q

Fig 11. Switching Time Waveform

Fig 12. Gate Charge Waveform

4

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