BUV52A Datasheet PDF - Inchange Semiconductor
| Part Number | BUV52A | |
| Description | Silicon NPN Power Transistor | |
| Manufacturers | Inchange Semiconductor | |
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUV52A
DESCRIPTION
·High Current Capability
·Low Collector Saturation Voltage-
: VCE(sat)= 0.9V (Max.) @IC= 7A
·High Switching Speed
APPLICATIONS
·Designed for high current, high speed, high power
applications.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCEV
Collector-Emitter Voltage
(VBE= -1.5V)
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current-Continuous
ICM Collector Current-Peak
IB Base Current-Continuous
IBM Base Current-peak
PC
Collector Power Dissipation
@TC=25℃
Tj Junction Temperature
Tstg Storage Temperature Range
VALUE UNIT
400 V
300 V
7V
20 A
30 A
4A
6A
150 W
200 ℃
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.17 ℃/W
isc website：www.iscsemi.cn
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for BUV52A electronic component. |
| Information | Total 2 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ BUV52A.PDF Datasheet ] | |
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