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PDF DN2530 Data sheet ( Hoja de datos )
| Número de pieza | DN2530 | |
| Descripción | Vertical DMOS FET | |
| Fabricantes | Microchip | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de DN2530 (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
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DN2530
N-Channel, Depletion-Mode, Vertical DMOS FET
Features
• High-input impedance
• Low-input capacitance
• Fast switching speeds
• Low on-resistance
• Free from secondary breakdown
• Low input and output leakage
Applications
• Normally-on switches
• Solid state relays
• Converters
• Linear amplifiers
• Constant current sources
• Power supply circuits
• Telecom
Description
The DN2530 is a low-threshold, depletion-mode, nor-
mally-on transistor that utilizes an advanced vertical
DMOS structure and a well-proven silicon-gate manu-
facturing process. This combination produces a device
with the power-handling capabilities of bipolar transis-
tors, plus the high-input impedance and positive-tem-
perature coefficient inherent in Metal-Oxide
Semiconductor (MOS) devices. Characteristic of all
MOS structures, this device is free from thermal run-
away and thermally-induced secondary breakdown.
Vertical DMOS Field-Effect Transistors (FETs) are ide-
ally suited to a wide range of switching and amplifying
applications where high breakdown-voltage, high-input
impedance, low-input capacitance, and fast switching
speeds are desired.
Package Types
SOURCE
DRAIN
GATE
TO-92
See Table 2-1 for pin information
DRAIN
SOURCE
DRAIN
GATE
TO-243AA (SOT-89)
2016 Microchip Technology Inc.
DS20005451A-page 1
1 page  
Output Characteristics
1.0
VGS = 1.0V
0.8
0.6
0.4
0.2
0
0
0.5V
0V
-0.5V
-1.0V
-1.5V
50 100 150 200 250
VDS (volts)
Transconductance vs. Drain Current
0.5
VDS = 10V
0.4
TA = -55°C
0.3 TA= 25°C
TA= 125°C
0.2
0.1
0
0
0.05 0.1
0.15 0.2 0.25
ID (amperes)
1 Maximum Rated Safe Operating Area
TO-92 (pulsed)
TO-92 (DC)
0.1
0.01
TC = 25°C
0.001
1
FIGURE 3-2:
10 100
VDS (volts)
1000
Typical Performance Curves
2016 Microchip Technology Inc.
DN2530
Saturation Characteristics
0.25
VGS = 1.0V
-0.5V
0.2 0.5V
0V -1.0V
0.15
0.1 -1.5V
0.05
0
0123
VDS (volts)
45
Power Dissipation vs. Ambient Temperature
2.0
TO-243AA
1.6
1.2
0.8
TO-92
0.4
0
0 25 50 75 100 125 150
TA (°C)
Thermal Response Characteristics
1.0
0.8
TO-243AA
TA = 25°C
PD = 1.6W
0.6
0.4
TO-92
TC = 25°C
0.2 PD = 1.0W
0
0.001
0.01 0.1
1.0
tP (seconds)
10
DS20005451A-page 5
5 Page 
DN2530
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
Device
XX - X
-X
Package Environmental Media
Options
Type
Examples:
a) DN2530N3-G
b) DN2530N8-G
Device:
DN2530 = N-Channel, Depletion-Mode,
Vertical DMOS FET
Package:
N3 = TO-92, 3-lead
N8 = TO-243AA (SOT-89), 3-lead
Environmental
G = Lead (Pb)-free/ROHS-compliant package
Media Type:
(blank) = 1000/Reel for N3 packages
= 2000/Reel for N8 packages
TO-92 package,
1000/reel
TO-243AA package,
2000/reel
2016 Microchip Technology Inc.
DS20005451A-page 11
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet DN2530.PDF ] | |
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