DN2470 데이터시트 PDF

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DN2470

N-Channel Depletion-Mode Vertical DMOS FET

Features

► High input impedance

► Low input capacitance

► Fast switching speeds

► Low on resistance

► Free from secondary breakdown

► Low input and output leakage

Applications

► Normally-on switches

► Solid state relays

► Converters

► Linear amplifiers

► Constant current sources

► Battery operated systems

► Telecom

Ordering Information

BV /BV

DSX

DGX

700V

R (max)

DS(ON)

42Ω

General Description

The DN2470 is a low threshold depletion-mode (normally-on)

transistor utilizing an advanced vertical DMOS structure and

Supertex’s well-proven silicon-gate manufacturing process.

This combination produces a device with the power handling

capabilities of bipolar transistors and with the high input

impedance and positive temperature coefficient inherent

in MOS devices. Characteristic of all MOS structures, this

device is free from thermal runaway and thermally-induced

secondary breakdown.

Supertex’s vertical DMOS FET is ideally suited to a wide

range of switching and amplifying applications where very

low threshold voltage, high breakdown voltage, high input

impedance, low input capacitance, and fast switching speeds

are desired.

I (min)

DSS

500mA

Package Options

TO-252 (D-PAK)

DN2470K4-G

Absolute Maximum Ratings

Parameter

Value

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

BVDSX

BV

DGX

±20V

Operating and storage

temperature

-55OC to +150OC

Soldering temperature*

300OC

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

*Distance of 1.6mm from case for 10 seconds.

Package Option

Drain

Gate

Source

TO-252 (D-PAK)

(top view)

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