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부품번호 | DN2624N3 기능 |
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기능 | N-Channel Depletion-Mode Vertical DMOS FETs | ||
제조업체 | Supertex | ||
로고 | |||
– OBSOLETE –
N-Channel Depletion-Mode
Vertical DMOS FETs
Ordering Information
BVDSX /
BVDGX
240V
RDS(ON)
(max)
4.0Ω
IDSS
(min)
600mA
Order Number / Package
TO-92
DN2624N3
Die
DN2624ND
DN2624
Features
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Applications
Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecom
Advanced DMOS Technology
These low threshold depletion-mode (normally-on) transistors
utilize an advanced vertical DMOS structure and Supertex’s
well-proven silicon-gate manufacturing process. This combina-
tion produces devices with the power handling capabilities of
bipolar transistors and with the high input impedance and posi-
tive temperature coefficient inherent in MOS devices. Character-
istic of all MOS structures, these devices are free from thermal
runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
8
Package Options
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
BVDSX
BVDGX
± 20V
Operating and Storage Temperature
-55°C to +150°C
Soldering Temperature*
* Distance of 1.6 mm from case for 10 seconds.
300°C
SGD
TO-92
Note: See Package Outline section for dimensions.
8-9
Typical Performance Curves
– OBSOLETE –Output Characteristics
Saturation Characteristics
2.0 2.0
DN2624
1.6
VGS = 1.0V
1.2
0.5V
0.8 0V
0.4 -0.5V
-1.0V
0
0 10 20 30 40 50
VDS (volts)
Transconductance vs. Drain Current
2.0
VDS = 10V
1.6
TA = -55°C
TA = 25°C
1.2
TA = 125°C
0.8
1.6
VGS = 1.0V
1.2
0.5V
0.8
0V
0.4 -0.5V
-1.0V
0
0 2 4 6 8 10
VDS (volts)
Power Dissipation vs. Temperature
1.0
0.8 TO-92
0.6
0.4
0.4 0.2
0
0 0.2 0.4 0.6 0.8 1.0
ID (amperes)
Maximum Rated Safe Operating Area
1.0
TO-92 (pulsed)
0.1
TO-92 (DC)
0.01
0.001 TA = 25°C
1
10 100
VDS (volts)
1000
0
0
1.0
25 50 75 100 125 150
TA(°C)
Thermal Response Characteristics
0.8
0.6
8-12
0.4
0.2
0
0.001
TO-92
PD = 1.0W
TA = 25°C
0.01 0.1
1
tp (seconds)
10
4페이지 | |||
구 성 | 총 4 페이지수 | ||
다운로드 | [ DN2624N3.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
DN2624N3 | N-Channel Depletion-Mode Vertical DMOS FETs | Supertex |
DN2624ND | N-Channel Depletion-Mode Vertical DMOS FETs | Supertex |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |