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DSC2001

Silicon NPN epitaxial planar type

For general amplification

Complementary to DSA2001

 Features

 High forward current transfer ratio hFE with excellent linearity

 Low collector-emitter saturation voltage VCE(sat)

 Halogen-free / RoHS compliant

(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)

 Marking Symbol: C1

Unit: mm

 Packaging

DSC2001×0L Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)

 Absolute Maximum Ratings Ta = 25°C

Parameter

Symbol

Rating

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector current

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

VCBO

VCEO

VEBO

IC

ICP

PC

Tj

Tstg

60

50

7

100

200

200

150

–55 to +150

Unit

V

V

V

mA

mA

mW

°C

°C

1: Base

2: Emitter

3: Collector

Panasonic

JEITA

Code

Mini3-G3-B

SC-59A

TO-236AA/SOT-23

 Electrical Characteristics Ta = 25°C±3°C

Parameter

Symbol

Conditions

Min Typ Max

Collector-base voltage (Emitter open)

VCBO IC = 10 mA, IE = 0

60

Collector-emitter voltage (Base open)

VCEO IC = 2 mA, IB = 0

50

Emitter-base voltage (Collector open)

VEBO IE = 10 mA, IC = 0

7

Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0

Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0

Forward current transfer ratio *1

hFE VCE = 10 V, IC = 2 mA

0.1

100

210 460

Collector-emitter saturation voltage

VCE(sat) IC = 100 mA, IB = 10 mA

0.13 0.3

Transition frequency

Collector output capacitance

(Common base, input open circuited)

fT VCE = 10 V, IC = 2 mA

Cob VCB = 10 V, IE = 0, f = 1 MHz

150

1.5

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *1: Rank classification

Code

RS 0

Rank

R S No-rank

hFE

Marking Symbol

210 to 340

C1R

290 to 460

C1S

210 to 460

C1

Product of no-rank is not classified and have no marking symbol for rank.

Publication date: November 2012

Ver. DED

Unit

V

V

V

mA

mA



V

MHz

pF

1

Request for your special attention and precautions in using the technical information and

semiconductors described in this book

(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

regulations of the exporting country, especially, those with regard to security export control, must be observed.

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of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any

other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any

other company which may arise as a result of the use of technical information described in this book.

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