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PDF AP50PN750I Data sheet ( Hoja de datos )

Número de pieza AP50PN750I
Descripción N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Fabricantes Advanced Power Electronics 
Logotipo Advanced Power Electronics Logotipo



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No Preview Available ! AP50PN750I Hoja de datos, Descripción, Manual

Advanced Power
Electronics Corp.
AP50PN750I
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
100% UIS Test
Simple Drive Requirement
D
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
G
S
Description
AP50PN750 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220CFM package is widely preferred for all commercial-
industrial through hole applications. The mold compound provides a
high isolation voltage capability and low thermal resistance between
the tab and the external heat-sink.
BVDSS
RDS(ON)
ID3
500V
0.75Ω
8.6A
G
DS
TO-220CFM(I)
.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
PD@TA=25
EAS
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy4
Storage Temperature Range
Operating Junction Temperature Range
500
+20
8.6
5.4
34
31.3
1.92
18
-55 to 150
-55 to 150
V
V
A
A
A
W
W
mJ
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
4
65
Units
/W
/W
1
201510261

1 page




AP50PN750I pdf
MARKING INFORMATION
50PN750
YWWSSS
Part Number
Date Code (YWWSSS)
YLast Digit Of The Year
WWWeek
SSSSequence
AP50PN750I
.
5

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