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SMP60N03-10L PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 SMP60N03-10L
기능 MOSFET
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SMP60N03-10L 데이터시트, 핀배열, 회로
SMP60N03-10L
Siliconix
N-Channel 30-V (D-S), 150_C MOSFET, Logic Level
Product Summary
V(BR)DSS (V)
30
rDS(on) (W)
0.01
TO-220AB
ID (A)
60
D
G
DRAIN connected to TAB
GD S
S
Top View
N-Channel MOSFET
Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)
Drain-Source Voltage
Gate-Source Voltage
Parameter
Continuous Drain Current
Pulsed Drain Current
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energya
Power Dissipation
Operating Junction and Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
TC = 25_C
TC = 100_C
L = 0.1 mH
L = 0.05 mH
TC = 25_C
TC = 100_C
Symbol
VDS
VGS
ID
IDM
IAR
EAS
EAR
PD
TJ, Tstg
TL
Limit
30
"20
60
51
240
60
180
90
105
42
–55 to 150
300
Unit
V
A
mJ
W
_C
Thermal Resistance Ratings
Parameter
Symbol
Typical
Maximum
Junction-to-Ambient
Junction-to-Case
Case-to-Sink
RthJA
RthJC
RthCS
1.0
80
1.2
Notes:
a. Duty cycle v1%
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70280.
A SPICE Model data sheet is available for this product (FaxBack document #70525).
Unit
_C/W
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com
S-57253—Rev. D, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors
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SMP60N03-10L pdf, 반도체, 판매, 대치품
SMP60N03-10L
Siliconix
Typical Characteristics (25_C Unless Otherwise Noted)
On-Resistance vs. Junction Temperature
1.6
ID = 30 A
1.5
Source-Drain Diode Forward Voltage
100
VGS = 10 V
5V
1.3
TJ = 150_C
10 TJ = 25_C
1.1
0.9
0.7
–40
0 40
80 120 160
TJ – Junction Temperature (_C)
Thermal Ratings
Maximum Avalanche and Drain Current
vs. Case Temperature
80
60
1
0 0.25 0.50 0.75 1.00 1.25
VSD – Source-to-Drain Voltage (V)
Safe Operating Area
300 10 ms
Limited
100 by rDS(on)
100 ms
1 ms
40
10 10 ms
100 ms
20
TC = 25_C
dc
Single Pulse
0
0 25 50 75 100 125 150
TC – Case Temperature (_C)
1
0.1
1.0 10.0
VDS – Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
100.0
0.2
0.1
0.1
0.05
0.02
0.01
10–5
Single Pulse
10–4
10–3
10–2
Square Wave Pulse Duration (sec)
10–1
1
Vishay-Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 S Phone (408)988-8000 S FaxBack (408)970-5600 S www.siliconix.com
S-57253—Rev. D, 24-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors
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