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부품번호 | TSM60NB260 기능 |
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기능 | N-Channel Power MOSFET / Transistor | ||
제조업체 | Taiwan Semiconductor | ||
로고 | |||
전체 7 페이지수
TSM60NB260
Taiwan Semiconductor
N-Channel Power MOSFET
600V, 13A, 0.26Ω
FEATURES
● Super-Junction technology
● High performance, small RDS(ON)*Qg figure of merit (FOM)
● High ruggedness performance
● 100% UIS tested
● High commutation performance
● Pb-free plating
● Compliant to RoHS Directive 2011/65/EU and in
accordance to WEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
VDS
RDS(on) (max)
Qg
600
0.26
30
V
Ω
nC
APPLICATION
● Power Supply
● AC/DC LED Lighting
ITO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS 600
Gate-Source Voltage
Continuous Drain Current (Note 1)
Pulsed Drain Current (Note 2)
TC = 25°C
TC = 100°C
Total Power Dissipation @ TC = 25°C
Single Pulsed Avalanche Energy (Note 3)
Single Pulsed Avalanche Current (Note 3)
Operating Junction and Storage Temperature Range
VGS
ID
IDM
PDTOT
EAS
IAS
TJ, TSTG
±30
13
7.8
39
32.1
196.9
2.5
- 55 to +150
UNIT
V
V
A
A
A
W
mJ
A
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to Case Thermal Resistance
RӨJC
3.9 °C/W
Junction to Ambient Thermal Resistance
RӨJA
62 °C/W
Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board
design. RӨJA shown below for single device operation on FR-4 PCB with minimum recommended footprint in still air.
1 Version: A1511
CHARACTERISTICS CURVES
(TC = 25°C unless otherwise noted)
Output Characteristics
TSM60NB260
Taiwan Semiconductor
Transfer Characteristics
VDS, Drain to Source Voltage (V)
On-Resistance vs. Drain Current
VGS, Gate to Source Voltage (V)
Gate-Source Voltage vs. Gate Charge
ID, Continuous Drain Current (A)
On-Resistance vs. Junction Temperature
Qg, Gate Charge (nC)
Source-Drain Diode Forward Current vs. Voltage
TJ, Junction Temperature (°C)
VSD, Body Diode Forward Voltage (V)
4 Version: A1511
4페이지 TSM60NB260
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular
purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
7 Version: A1511
7페이지 | |||
구 성 | 총 7 페이지수 | ||
다운로드 | [ TSM60NB260.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
TSM60NB260 | N-Channel Power MOSFET / Transistor | Taiwan Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |