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부품번호 | STB18NM60ND 기능 |
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기능 | N-channel Power MOSFET | ||
제조업체 | STMicroelectronics | ||
로고 | |||
전체 22 페이지수
STB18NM60ND, STF18NM60ND,
STP18NM60ND, STW18NM60ND
N-channel 600 V - 0.25 Ω typ., 13 A FDmesh™ II Power MOSFET
(with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247 packages
Datasheet − production data
TAB
3
1
D2PAK
TAB
3
2
1
TO-220FP
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
'7$%
*
6
$0Y
Features
Order codes
STB18NM60ND
STF18NM60ND
STP18NM60ND
STW18NM60ND
VDSS @
TJmax
650 V
RDS(on)
max
ID
<0.29 Ω 13 A
• The worldwide best RDS(on)* area amongst the
fast recovery diode devices
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
• Extremely high dv/dt and avalanche
capabilities
Applications
• Switching applications
Description
These FDmesh™ II Power MOSFETs with
intrinsic fast-recovery body diode are produced
using the second generation of MDmesh™
technology. Utilizing a new strip-layout vertical
structure, these revolutionary devices feature
extremely low on-resistance and superior
switching performance. They are ideal for bridge
topologies and ZVS phase-shift converters.
Order codes
STB18NM60ND
STF18NM60ND
STP18NM60ND
STW18NM60ND
Table 1. Device summary
Marking
Package
D2PAK
18NM60ND
TO-220FP
TO-220
TO-247
Packaging
Tape and reel
Tube
May 2013
This is information on a product in full production.
DocID024653 Rev 1
1/22
www.st.com
22
Electrical characteristics
STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND
2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Symbol
Parameter
Table 5. On/off states
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
IDSS
Zero gate voltage drain
current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
ID = 1 mA, VGS= 0
VDS = 600 V,
VDS = 600 V, TC=125 °C
VGS = ±20 V
VDS= VGS, ID = 250 µA
VGS= 10 V, ID= 6.5 A
Min. Typ. Max. Unit
600 V
1 µA
100 µA
±100 nA
345V
0.25 0.29 Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f =1 MHz,
VGS = 0
- 1030 -
- 30 -
- 3.2 -
pF
pF
pF
Coss
(1)
eq.
Equivalent output
capacitance
VGS = 0, VDS = 0V to 480 V - 148 -
pF
Rg Gate input resistance
f=1 MHz Gate DC Bias=0
Test signal level=20 mV
- 3.6 -
open drain
Ω
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 480 V, ID = 13 A
VGS = 10 V
(see Figure 18)
- 34 - nC
- 5.5 - nC
- 20 - nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/22 DocID024653 Rev 1
4페이지 STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND
Electrical characteristics
Figure 8. Output characteristics
ID AM15788v1
(A) VGS=7, 8, 9, 10V
28
26
24
22 6V
20
18
16
14
12
10
8 5V
6
4
2
0 4V
0 5 10 15 20 VDS(V)
Figure 10. Gate charge vs gate-source voltage
VGS
(V)
VDS
10
VDD=480V
ID=13A
AM15791v1
VDS
(V)
500
8 400
Figure 9. Transfer characteristics
ID (A)
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
0
VDS=18V
2 46
AM15789v1
8 10 VGS(V)
Figure 11. Static drain-source on-resistance
RDS(on)
(Ω)
0.265
VGS=10V
AM15790v1
0.260
6 300 0.255
4 200 0.250
2 100 0.245
00
0 8 16 24 32 Qg(nC)
0.240
0
2 4 6 8 10 12 ID(A)
Figure 12. Capacitance variations
C
(pF)
AM15792v1
1000
Ciss
100
10
1
0.1 1
Coss
Crss
10 100 VDS(V)
Figure 13. Normalized gate threshold voltage
vs. temperature
VGS(th)
(norm)
1.10
ID=250 µA
AM15793v1
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
-50 -25 0 25 50 75 100 125 TJ(°C)
DocID024653 Rev 1
7/22
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부품번호 | 상세설명 및 기능 | 제조사 |
STB18NM60N | Power MOSFET ( Transistor ) | ST Microelectronics |
STB18NM60ND | N-channel Power MOSFET | STMicroelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |