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PDF MTDA0A10Q8 Data sheet ( Hoja de datos )
| Número de pieza | MTDA0A10Q8 | |
| Descripción | Dual N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTDA0A10Q8 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C870Q8
Issued Date : 2016.08.16
Revised Date : 2016.09.22
Page No. : 1/9
Dual N-Channel Enhancement Mode Power MOSFET
MTDA0A10Q8 BVDSS
ID@VGS=10V, TA=25°C
ID@VGS=10V, TA=70°C
RDSON@VGS=10V, ID=2A
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Dual N-ch MOSFET package
• Pb-free lead plating & Halogen-free package
RDSON@VGS=5V, ID=2A
100V
2.9A
2.3A
70mΩ(typ)
82mΩ(typ)
Equivalent Circuit
MTDA0A10Q8
Outline
SOP-8
D2
D2
D1
D1
G：Gate
S：Source
D：Drain
Pin 1
G2
S2
G1
S1
Ordering Information
Device
MTDA0A10Q8-0-T3-G
Package
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTDA0A10Q8
Preliminary
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C870Q8
Issued Date : 2016.08.16
Revised Date : 2016.09.22
Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Ciss
100 C oss
10
0
Crss
5 10 15 20 25
VDS, Drain-Source Voltage(V)
30
NormalizedThreshold Voltage vs Junction Tempearture
1.4
1.2
ID=1mA
1
0.8
ID=250μA
0.6
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
10 10
8
1
6
0.1
0.01
0.001
100
VDS=10V
Pulsed
Ta=25°C
0.01 0.1
1
ID, Drain Current(A)
Maximum Safe Operating Area
10
10
RDS(ON)
Limited
100μs
1ms
1 10ms
100ms
0.1 TA=25°C, Tj=150°, VGS=10V
RθJA=78°C/W, Single Pulse
1s
DC
0.01
0.01 0.1 1 10 100
VDS, Drain-Source Voltage(V)
1000
4
2 VDS=50V
ID=2A
0
0 2 4 6 8 10
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Junction Temperature
4
3.5
3
2.5
2
1.5
1
0.5 VGS=10V, RθJA=78°C/W
0
25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTDA0A10Q8
Preliminary
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTDA0A10Q8.PDF ] | |
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