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부품번호 | MTDA0A10DH8 기능 |
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기능 | Dual N-Channel Enhancement Mode Power MOSFET | ||
제조업체 | Cystech Electonics | ||
로고 | |||
CYStech Electronics Corp.
Spec. No. : C870H8
Issued Date : 2016.05.06
Revised Date :
Page No. : 1/ 9
Dual N-Channel Enhancement Mode Power MOSFET
MTDA0A10DH8 BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TC=100°C
ID@VGS=10V, TA=25°C
Features
• Low On Resistance
ID@VGS=10V, TA=70°C
RDS(ON)@VGS=10V, ID=2A
• Simple Drive Requirement
RDS(ON)@VGS=5V, ID=2A
• Low Gate Charge
• Fast Switching Characteristic
• Pb-free lead plating and Halogen-free package
100V
10A
6.3A
3A
2.4A
70mΩ(typ)
82mΩ(typ)
Equivalent Circuit
MTDA0A10DH8
Outline
Pin 1
DFN5×6
G:Gate D:Drain S:Source
Ordering Information
Device
MTDA0A10DH8-0-T6-G
Package
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTDA0A10DH8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C870H8
Issued Date : 2016.05.06
Revised Date :
Page No. : 4/ 9
Typical Characteristics
Typical Output Characteristics
20
10V, 9V, 8V,7V,6V
VGS=5V
15
VGS=4.5V
10
VGS=4V
5
VGS=3V
VGS=3.5V
0
0 2 4 6 8 10
VDS, Drain-Source Voltage(V)
1000
Static Drain-Source On-State resistance vs Drain Current
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6 ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
1 Tj=25°C
VGS=4.5V
100
VGS=10V
0.8
0.6 Tj=150°C
0.4
10
0.01
0.1 1 10
ID, Drain Current(A)
100
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
500
450
400 ID=2A
350
300
250
200
150
100
50
0
0 2 4 6 8 10
VGS, Gate-Source Voltage(V)
0.2
0
4 8 12 16
IDR, Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
2.5
VGS=10V, ID=2A
2
1.5
1
0.5
RDS(ON)@Tj=25°C : 70mΩ typ
0
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTDA0A10DH8
CYStek Product Specification
4페이지 Reel Dimension
CYStech Electronics Corp.
Spec. No. : C870H8
Issued Date : 2016.05.06
Revised Date :
Page No. : 7/ 9
Carrier Tape Dimension
Pin #1
MTDA0A10DH8
CYStek Product Specification
7페이지 | |||
구 성 | 총 9 페이지수 | ||
다운로드 | [ MTDA0A10DH8.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
MTDA0A10DH8 | Dual N-Channel Enhancement Mode Power MOSFET | Cystech Electonics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |