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부품번호 | MTDA0N10AV8 기능 |
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기능 | N-Channel Enhancement Mode Power MOSFET | ||
제조업체 | Cystech Electonics | ||
로고 | |||
CYStech Electronics Corp.
Spec. No. : C870V8
Issued Date : 2015.12.22
Revised Date :
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTDA0N10AV8 BVDSS
ID @ TC=25°C, VGS=10V
ID @ TA=25°C, VGS=10V
RDSON(TYP)
VGS=10V, ID=3A
VGS=5V, ID=3A
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Pb-free lead plating and halogen-free package
100V
8.5A
3.5A
74mΩ
84mΩ
Equivalent Circuit
MTDA0N10AV8
Outline
Pin 1
DFN3×3
G:Gate D:Drain S:Source
Ordering Information
Device
MTDA0N10AV8-0-T6-G
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTDA0N10AV8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C870V8
Issued Date : 2015.12.22
Revised Date :
Page No. : 4/9
Typical Characteristics
Typical Output Characteristics
20
10V,9V,8V,7V,6V,5
16 4.5V
Brekdown Voltage vs Ambient Temperature
1.4
1.2
12
8 4V
4
VGS=3.5
0
0 2 4 6 8 10
VDS, Drain-Source Voltage(V)
1000
Static Drain-Source On-State resistance vs Drain Current
VGS=4.5V
5V
10V
1
0.8
ID=250μA,
VGS=0V
0.6
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
1 Tj=25°C
0.8
100
Tj=150°C
0.6
0.4
10
0.1
1 10
ID, Drain Current(A)
100
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
1000
900
ID=3A
800
700
600
500
400
300
200
100
0
0 2 4 6 8 10
VGS, Gate-Source Voltage(V)
0.2
0 2 4 6 8 10 12 14 16 18 20
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
2.4
VGS=10V, ID=3A
2 RDSON@Tj=25°C : 74mΩ typ.
1.6
1.2
0.8
0.4 VGS=5V, ID=3A
RDSON@Tj=25°C : 84mΩ typ.
0
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTDA0N10AV8
CYStek Product Specification
4페이지 Reel Dimension
CYStech Electronics Corp.
Spec. No. : C870V8
Issued Date : 2015.12.22
Revised Date :
Page No. : 7/9
Carrier Tape Dimension
MTDA0N10AV8
CYStek Product Specification
7페이지 | |||
구 성 | 총 9 페이지수 | ||
다운로드 | [ MTDA0N10AV8.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
MTDA0N10AV8 | N-Channel Enhancement Mode Power MOSFET | Cystech Electonics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |