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PDF MTA50P01SN3 Data sheet ( Hoja de datos )
| Número de pieza | MTA50P01SN3 | |
| Descripción | -14V P-Channel Enhancement Mode MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTA50P01SN3 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C101N3
Issued Date : 2015.09.09
Revised Date : 2016.10.11
Page No. : 1/9
-14V P-Channel Enhancement Mode MOSFET
MTA50P01SN3
Features
• Low gate charge
• Compact and low profile SOT-23 package
• Advanced trench process technology
• High density cell design for ultra low on resistance
• Pb-free lead plating package
BVDSS
ID @ VGS=-10V, TA=25°C
RDSON@VGS=-4.5V, ID=-3.6A
RDSON@VGS=-2.5V, ID=-3.2A
-14V
-4.3A
42.3mΩ(typ)
62.9mΩ(typ)
Symbol
MTA50P01SN3
Outline
SOT-23
D
G：Gate
S：Source
D：Drain
S
G
Ordering Information
Device
MTA50P01SN3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
MTA50P01SN3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C101N3
Issued Date : 2015.09.09
Revised Date : 2016.10.11
Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
f=1MHz
Ciss
Threshold Voltage vs Junction Tempearture
1.4
1.2
ID=-1mA
1.0
Coss 0.8
0.6
100
0.1
Crss
1
-VDS, Drain-Source Voltage(V)
0.4 ID=-250μA
0.2
10 -75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Maximum Safe Operating Area
100
RDS(ON)
Limited
10
100μs
1ms
1 10ms
0.1 TA=25°C, Tj=150°C,
VGS=-4.5V, RθJA=90°C/W,
single pulse
100ms
1s
DC
0.01
0.1
1 10
-VDS, Drain-Source Voltage(V)
100
Gate Charge Characteristics
10
8
6
4
2 VDS=-10V
ID=-2A
0
0 2 4 6 8 10 12 14 16 18 20
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
5
4.5
4
3.5
3
2.5
2
1.5
1 VGS=-4.5V, Tj(max)=150°C,
0.5 RθJA=90°C/W, single pulse
0
25 50 75 100 125 150
Tj, Junction Temperature(°C)
175
Typical Transfer Characteristics
20
VDS=-5V
16
12
8
4
0
0 12 34
-VGS, Gate-Source Voltage(V)
5
MTA50P01SN3
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTA50P01SN3.PDF ] | |
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