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PDF MTB60A03KQ8 Data sheet ( Hoja de datos )
| Número de pieza | MTB60A03KQ8 | |
| Descripción | Dual N-Channel Logic Level Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTB60A03KQ8 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C122Q8
Issued Date : 2015.05.25
Revised Date :
Page No. : 1/9
Dual N-Channel Logic Level Enhancement Mode Power MOSFET
MTB60A03KQ8
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• ESD Protected
• Pb-free & Halogen-free package
BVDSS
ID@VGS=10V, TA=25°C
ID@VGS=10V, TA=70°C
RDS(ON)@VGS=10V, ID=3.6A
RDS(ON)@VGS=4.5V, ID=3.6A
RDS(ON)@VGS=4V, ID=3.6A
30V
4.8A
3.8A
31 mΩ(typ)
46 mΩ(typ)
53 mΩ(typ)
Symbol
MTB60A03KQ8
Outline
SOP-8
G：Gate D：Drain S：Source
Ordering Information
Device
MTB60A03KQ8-0-T3-G
Package
SOP-8
(Pb-free lead plating & halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB60A03KQ8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C122Q8
Issued Date : 2015.05.25
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Threshold Voltage vs Junction Tempearture
1.4
1.2 ID=1mA
Ciss
1
100
C oss 0.8
10
0.1
10
Crss
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
0.6 ID=250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
8
1
6
0.1 VDS=5V
Ta=25°C
Pulsed
0.01
0.001
0.01 0.1
1
ID, Drain Current(A)
10
Maximum Safe Operating Area
100
100μs
10 RDSON
Limited
1
0.1
0.01
0.01
TA=25°C, Tj=150°C
VGS=10V, RθJA=78°C/W
Single Pulse
0.1 1
10
VDS, Drain-Source Voltage(V)
1ms
10ms
100ms
1s
DC
100
4
2 VDS=15V
ID=3.5A
0
0 24 68
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
6
5
4
3
2
1 TA=25°C, VGS=10V, RθJA=78°C/W
0
25 50 75 100 125 150
Tj, Junction Temperature(°C)
175
MTB60A03KQ8
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTB60A03KQ8.PDF ] | |
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