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부품번호 | MTB60A06Q8 기능 |
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기능 | Dual N-Channel Enhancement Mode Power MOSFET | ||
제조업체 | Cystech Electonics | ||
로고 | |||
CYStech Electronics Corp.
Spec. No. : C708Q8
Issued Date : 2010.12.16
Revised Date : 2012.08.06
Page No. : 1/9
Dual N-Channel Enhancement Mode Power MOSFET
MTB60A06Q8 BVDSS
ID
RDSON@VGS=10V, ID=5A
RDSON@VGS=5V, ID=4A
60V
7A
37mΩ(typ)
42mΩ(typ)
Description
The MTB60A06Q8 provides the designer with the best combination of fast switching, ruggedized device
design, ultra low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Dual N-ch MOSFET package
• Pb-free lead plating & Halogen-free package
Equivalent Circuit
MTB60A06Q8
Outline
SOP-8
Pin 1
G:Gate
S:Source
D:Drain
MTB60A06Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C708Q8
Issued Date : 2010.12.16
Revised Date : 2012.08.06
Page No. : 4/9
Typical Characteristics
Typical Output Characteristics
60
10V, 9V, 8V, 7V, 6V,
50
40 VGS=4V
30
20
VGS=3V
10
0
0 2 4 6 8 10
VDS, Drain-Source Voltage(V)
Normailzed Brekdown Voltage vs Ambient
Temperature
1.6
1.4
1.2
1
0.8
ID=250μA,
0.6 VGS=0V
0.4
-60
-20 20
60 100 140
Tj, Junction Temperature(°C)
180
1000
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
100 VGS=3V
VGS=5V
1
0.8
0.6
Tj=25°C
Tj=150°C
VGS=10V
0.4
10
0.1
1 10
ID, Drain Current(A)
100
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
90 ID=5A
80
70
60
50
40
30
20
10
0
0 2 4 6 8 10
VGS, Gate-Source Voltage(V)
0.2
0
4 8 12 16
IDR, Reverse Drain Current(A)
20
Normalized Drain-Source On-State Resistance vs
Junction Tempearture
2.4
2 VGS=5V, ID=4A
1.6
1.2
0.8 VGS=10V, ID=5A
0.4
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Tj, Junction Temperature(°C)
MTB60A06Q8
CYStek Product Specification
4페이지 Reel Dimension
CYStech Electronics Corp.
Spec. No. : C708Q8
Issued Date : 2010.12.16
Revised Date : 2012.08.06
Page No. : 7/9
Carrier Tape Dimension
MTB60A06Q8
CYStek Product Specification
7페이지 | |||
구 성 | 총 9 페이지수 | ||
다운로드 | [ MTB60A06Q8.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
MTB60A06Q8 | Dual N-Channel Enhancement Mode Power MOSFET | Cystech Electonics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |