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PDF MTC5806V8 Data sheet ( Hoja de datos )
| Número de pieza | MTC5806V8 | |
| Descripción | N- AND P-Channel Logic Level Enhancement Mode MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTC5806V8 (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C407V8
Issued Date : 2014.11.10
Revised Date : 2016.10.11
age No. : 1/13
N- AND P-Channel Logic Level Enhancement Mode MOSFET
MTC5806V8
BVDSS
ID@VGS=10V(-10V), TA=25°C
ID@VGS=10V(-10V), TC=25°C
RDSON@VGS=10V(-10V) typ.
RDSON@VGS=4.5V(-4.5V) typ.
N-CH
60V
4.3A
6.4A
37mΩ
42mΩ
P-CH
-60V
-3.3A
-4.6A
70mΩ
93mΩ
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTC5806V8
Outline
DFN3×3
G：Gate S：Source D：Drain
Pin 1
Ordering Information
Device
MTC5806V8-0-T6-G
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTC5806V8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C407V8
Issued Date : 2014.11.10
Revised Date : 2016.10.11
age No. : 5/13
Typical Characteristics : Q1( N-channel )
Typical Output Characteristics
20
10V, 9V, 8V, 7V, 6V, 5V, 4V
15
10
VGS=3V
1.4
1.2
1
0.8
Brekdown Voltage vs Ambient Temperature
5
0
0 1 23 4 5
VDS, Drain-Source Voltage(V)
0.6 ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
1000
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=2.5V
100
VGS=3V
VGS=4.5V
VGS=10V
1
0.8
0.6
0.4
Tj=25°C
Tj=150°C
10
0.01
0.1 1 10
ID, Drain Current(A)
100
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
90
80 ID=4.3A
70
60
50
40
30
20
10
0
0 2 4 6 8 10
VGS, Gate-Source Voltage(V)
0.2
0
2468
IDR, Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
2.8
2.4
VGS=4.5V, ID=4A
RDS(ON)@Tj=25°C : 42mΩ typ.
2
1.6
1.2
0.8 VGS=10V, ID=4.3A
RDS(ON)@Tj=25°C : 37mΩ typ.
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
MTC5806V8
CYStek Product Specification
5 Page 
Reel Dimension
CYStech Electronics Corp.
Spec. No. : C407V8
Issued Date : 2014.11.10
Revised Date : 2016.10.11
age No. : 11/13
Carrier Tape Dimension
MTC5806V8
CYStek Product Specification
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet MTC5806V8.PDF ] | |
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