|
|
PDF MTC5806AQ8 Data sheet ( Hoja de datos )
| Número de pieza | MTC5806AQ8 | |
| Descripción | N- AND P-Channel Logic Level Enhancement Mode MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MTC5806AQ8 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
|
No Preview Available !
CYStech Electronics Corp.
Spec. No. : C407Q8
Issued Date : 2008.12.02
Revised Date : 2012.05.17
Page No. : 1/12
N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
MTC5806AQ8 BVDSS
N-CH
60V
ID 4.5A
RDSON(typ.) @VGS=(-)10V 37mΩ
RDSON(typ.) @VGS=(-)4.5V 42mΩ
P-CH
-60V
-3.5A
70mΩ
93mΩ
Description
The MTC5806AQ8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single
SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free package
Equivalent Circuit
MTC5806AQ8
Outline
SOP-8
G：Gate
S：Source
D：Drain
MTC5806AQ8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C407Q8
Issued Date : 2008.12.02
Revised Date : 2012.05.17
Page No. : 5/12
Typical Characteristics(Cont.) : Q1( N-channel)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
Threshold Voltage vs Junction Tempearture
1.4
ID=250μA
1.2
1000 1
C oss
100
10
0.1
Crss
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
10
1
0.8
0.6
0.4
-60
10
8
6
-20 20
60 100
Tj, Junction Temperature(°C)
140
Gate Charge Characteristics
VDS=48V
VDS=30V
VDS=12V
0.1 VDS=10V
Pulsed
Ta=25°C
0.01
0.001
0.01 0.1
1
ID, Drain Current(A)
10
Maximum Safe Operating Area
100
RDS(ON)
10 Limite
100μs
1ms
1 10ms
0.1
TA=25°C, Tj=150°C, VGS=10V
RθJA=78°C/W,Single Pulse
0.01
0.01
0.1 1 10
VDS, Drain-Source Voltage(V)
100m
1s
DC
100
4
2
ID=4.5A
0
0 2 4 6 8 10 12 14 16
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
6
5
4
3
2
TA=25°C, VGS=10V
1 RθJA=78°C/W
0
25 50 75 100 125 150
TJ, Junction Temperature(°C)
175
MTC5806AQ8
CYStek Product Specification
5 Page 
CYStech Electronics Corp.
Spec. No. : C407Q8
Issued Date : 2008.12.02
Revised Date : 2012.05.17
Page No. : 11/12
Recommended wave soldering condition
Product
Peak Temperature
Pb-free devices
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Pb-free Assembly
Average ramp-up rate
(Tsmax to Tp)
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
217°C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
260 +0/-5 °C
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
Time 25 °C to peak temperature
6 minutes max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTC5806AQ8
CYStek Product Specification
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MTC5806AQ8.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MTC5806AQ8 | N- AND P-Channel Logic Level Enhancement Mode MOSFET | Cystech Electonics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |