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PTFB183404E 데이터시트 PDF




Infineon에서 제조한 전자 부품 PTFB183404E은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 PTFB183404E 기능
기능 High Power RF LDMOS Field Effect Transistors
제조업체 Infineon
로고 Infineon 로고


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PTFB183404E 데이터시트, 핀배열, 회로
PTFB183404E
PTFB183404F
High Power RF LDMOS Field Effect Transistors
340 W, 1805 – 1880 MHz
Description
The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs
intended for use in multi-standard cellular power amplifier applications
in the 1805 to 1880 MHz frequency band. Features include input and
output matching, high gain and thermally-enhanced package with
slotted and earless flanges. Manufactured with Infineon's advanced
LDMOS process, these devices provide excellent thermal performance
and superior reliability.
PTFB183404E
Package H-36275-8
PTFB183404F
Package H-37275-6/2
Two-carrier WCDMA 3GPP Drive-up
VDD = 30 V, IDQ = 2.6A, ƒ = 1880 MHz, 3GPP
WCDMA, PAR = 8:1, 10 MHz carrier spacing,
BW = 3.84 MHz
-25 35
-30 30
-35
IMD Low
-40 IMD Up
25
20
-45 15
-50
-55
-60
36
ACPR
Efficiency
38 40 42 44 46 48 50
Average Output Power (dBm)
10
5
0
52
Features
• Broadband internal input and output matching
• Wide video bandwidth
• Typical single-carrier WCDMA performance,
1880 MHz, 30 V
- Output power = 125 W
- Efficiency = 31%
- Gain = 17 dB
- PAR = 5.5 dB @ 0.01% CCDF probability
- ACPR @ 5 MHz = –37 dBc
• Increased negative gate-source voltage range for
improved performance in Doherty amplifiers
• Capable of handling 10:1 VSWR @ 30 V, 340 W
(CW) output power
• Integrated ESD protection
• Excellent thermal stability
• Pb-free and RoHS compliant
RF Characteristics
Two-carrier WCDMA Measurements (tested in Infineon test fixture)
VDD = 30 V, IDQ = 2.6 A, POUT = 80 W average, ƒ1 = 1870 MHz, ƒ2 = 1880 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
Gps
hD
IMD
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 18
Min
16
24
Typ
17
25.5
–35
Max
–32
Unit
dB
%
dBc
Rev. 04.1, 2016-06-10




PTFB183404E pdf, 반도체, 판매, 대치품
Typical Performance (cont.)
Two-tone Broadband
Gain, Efficiency & Return Loss
vs. Frequency
VDD = 30 V, IDQ = 2.6 A, POUT = 170 W
60 0
50 RL
-10
40 Efficiency
-20
30
IMD3
20
Gain
-30
-40
10 -50
1730 1767.5 1805 1842.5 1880 1917.5 1955
Frequency (MHz)
PTFB183404E
PTFB183404F
Two-tone Drive-up
VDD = 30 V, IDQ = 2.6 A,
ƒ1 = 1880 MHz, ƒ2 = 1879 MHz
-25 40
-30 35
-35 30
-40 IMD3
-45
25
20
-50 15
-55 10
-60 Efficiency
5
-65 0
39 41 43 45 47 49 51 53 55
Output Power, PEP (dBm)
Two-tone Drive-up
VDD = 30 V, IDQ = 2.6 A,
ƒ1 = 1880 MHz, ƒ2 = 1879 MHz
19 50
18
Gain
17
40
30
16
Efficiency
15
20
10
14 0
40 42 44 46 48 50 52 54 56
Output Power, PEP (dBm)
Two-tone Drive-up (over temp)
(POUT-max 3rd order IMD @ -30dBc)
VDD = 30 V, IDQ = 2.6 A,
ƒ1 = 1842.5 MHz, ƒ2 = 1841.5 MHz
19 50
18
Gain
17
40
30
16
Efficiency
15
+85°C
+25°C
20
10
-30°C
14 0
39 41 43 45 47 49 51 53 55 57
Output Power, PEP (dBm)
Data Sheet
4 of 18
Rev. 04.1, 2016-06-10

4페이지










PTFB183404E 전자부품, 판매, 대치품
db183404f-v1 Aug. 27, 2010 12:45:00 PM
ptfb183404f-v1
Nornalized to 50 Ohms
PTFB183404E
PTFB183404F
Broadband Circuit Impedance (combined leads)
Z Source
G
G
D Z Load
S
D
Frequency
MHz
1730
1768
1805
1843
1880
1918
1955
Z Source W
R jX
1.86
–4.25
1.77
–4.06
1.68
–3.88
1.61
–3.70
1.56
–3.53
1.51
–3.37
1.47
–3.22
Z Load W
R jX
0.55
–2.78
0.54
–2.66
0.53
–7.54
0.52
–2.43
0.51
–2.32
0.51
–2.21
0.5 –2.11
See next page for reference circuit information
Z0 = 50
Z Load
1730 MHz
1955 MHz
Z Source
1955 MHz
1730 MHz
0.1
0. 2
0.3
0.4
Data Sheet
7 of 18
Rev. 04.1, 2016-06-10

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PTFB183404E

High Power RF LDMOS Field Effect Transistors

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