PDF PTFB191501E Data sheet ( Hoja de datos )

Número de pieza	PTFB191501E
Descripción	Thermally-Enhanced High Power RF LDMOS FETs
Fabricantes	Infineon Technologies
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No Preview Available ! Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz Description The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features include input and output matching, and thermally-enhanced, RoHs-compliant package with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB191501E Package H-36248-2 PTFB191501F Package H-37248-2 PTFB191501E PTFB191501F Two-carrier WCDMA Drive-up VDD = 30 V, IDQ = 1.20 A, ƒ = 1990 MHz, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz -20 40 -25 Efficiency 35 -30 IMD Up 30 -35 25 -40 20 -45 15 IMD Low -50 10 -55 ACPR 5 -60 0 31 33 35 37 39 41 43 45 47 49 Output Power (dBm) RF Characteristics Features • Broadband internal matching • Typical two-carrier WCDMA performance at 1990 MHz, 30 V - Average output power = 35 W - Linear gain = 18 dB - Efficiency = 30% - Intermodulation distortion = –35 dBc • Typical CW performance, 1990 MHz, 30 V - Output power at P–1dB = 150 W - Efficiency = 55% • Increased negative gate-source voltage range for improved performance in Doherty peaking amplifiers • Integrated ESD protection: Human Body Model, Class 2 (minimum) • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR @ 30 V, 150 W (CW) output power • Pb-free, RoHS-compliant Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 30 V, IDQ = 1.2 A, POUT = 35 W average, ƒ1 = 1985 MHz, ƒ2 = 1995 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF Characteristic Gain Drain Efficiency Intermodulation Distortion Symbol Min Typ Gps — 18 ηD — 30 IMD — –35 Max — — — Unit dB % dBc All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 15 Rev. 03, 2015-01-14 1 page Confidential, Limited Internal Distribution Typical Performance (cont.) CW Performance Gain & Efficiency vs. Output Power VDD = 30 V, IDQ = 1.20 A, ƒ = 1990 MHz 21 –10 °C 20 25 °C 85 °C 19 Efficiency 60 50 40 18 30 17 20 Gain 16 10 43 44 45 46 47 48 49 50 51 52 53 Output Power (dBm) PTFB191501E PTFB191501F CW Performance Gain vs. Output Power VDD = 30 V, ƒ = 1990 MHz 19 IDQ = 1.40 A 18 IDQ = 1.20 A IDQ = 0.80 A 17 16 42 44 46 48 50 52 Output Power (dBm) 54 Single-carrier WCDMA VDD = 30 V, IDQ = 1.20A, f = 1990 MHz 3GPP_WCDMA, PAR = 8dB, BW 3.84MHz -20 40 Efficiency -30 30 -40 20 -50 10 ACP up ACP low -60 0 31 33 35 37 39 41 43 45 47 49 Output Power (dBm) Gate-Source Voltage vs. Case Temperature Voltage normalized to typical gate voltage. Series show current. 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 0.95 -20 0.40 A 1.53 A 2.67 A 3.80 A 4.93 A 6.07 A 0 20 40 60 80 Case Temperature (°C) 100 Data Sheet 5 of 15 Rev. 03, 2015-01-14 5 Page PTFB191501E PTFB191501F Confidential, Limited Internal Distribution Reference Circuit (cont.) Electrical Characteristics at 1990 MHz Schematic ID Electrical 1st/4th Dimension TL201 MCROSS TL202 TL203 TL204 TL205 TL206 TL207 TL208 TL209 TL210 TL211 TL212 TL213 TL214 TL215 TL216 TL217 TL218 TL219 MTEE MTAPER MTAPER MTAPER MSTEP MSTEP MLIN MLIN MLIN MLIN MLIN MLIN MLIN MLIN MLIN MLIN MLIN MCROSS 132.58 Ω 4.88 Ω 5.388 Ω 53.88 Ω 53.88 Ω 53.88 Ω 132.58 Ω 43.96 Ω 32.33 Ω 12.48 Ω 4.88 Ω 43.96 Ω 132.58 Ω 40.30 Ω 43.96 Ω 34.60 Ω 34.60 Ω 50.98 Ω 0.000 λ 0.026 λ 0.082 λ 0.082 λ 0.031 λ 0.022 λ 0.037 λ 0.125 λ 0.022 λ 0.000 λ 0.000 λ 0.066 λ 0.016 λ 0.016 λ 0.310 λ TL220 TL221 TL222 TL223 TL224 TL225 TL226 TL227 TL228 TL229 TL230 TL231 TL232 TL233 MSTEP$ MSTEP$ MSTEP$ MSTEP$ MTEE MTEE MLIN MTEE MTEE MTEE MLIN MLIN MTEE MLIN 30.35 Ω 53.88 Ω 40.30 Ω 40.30 Ω 30.35 Ω 12.48 Ω 12.48 Ω 12.48 Ω 12.48 Ω 53.88 Ω 0.059 λ 0.057 λ 0.000 λ 0.000 λ 0.059 λ 0.002 λ 0.002 λ 0.002 λ 0.002 λ 0.037 λ W1 25.654 mm 1010 mils W4 1.270 mm 50 mils W1 1.778 mm 70 mils W1 25.654 mm 1010 mils 9.144 mm380 mils W2 W1 9.144 mm 360 mils W2 W1 2.794 mm 110 mils W2 W1 1.778 mm 70 mils W1 2.540 mm 100 mils W 25.654 mm 1010 mils W 1.270 mm 50 mils W 1.270 mm 50 mils W 25.654 mm 1010 mils W 0.025 mm 1 mils W 0.025 mm 1 mils W 2.032 mm 80 mils W 1.778 mm 70 mils W 2.540 mm 100 mils W 2.540 mm 100 mils W 1.397 mm 55 mils W1 9.144 mm 360 mils W4 0.025 mm 1 mils W1 1.270 mm 50 mils W1 1.270 mm 50 mils W1 3.048 mm 120 mils W1 3.048 mm 120 mils W1 9.144 mm 360 mils W1 9.144 mm 360 mils W 9.144 mm 360 mils W1 9.144 mm 360 mils W1 9.144 mm 360 mils W1 9.144 mm 360 mils W 9.144 mm 360 mils W 9.144 mm 360 mils W1 9.144 mm 360 mils W 9.144 mm 360 mils 2nd Dimension W2 1.270 mm 50 mils W2 1.778 mm 70 mils W2 9.144 mm 360 mils 9.144 mm360 mils L W2 2.794 mm 110 mils 2.794 mm110 mils L W2 1.778 mm 70 mils 1.778 mm70 mils L W2 2.540 mm 100 mils W2 1.397 mm 55 mils L 0.025 mm 1 mils L 6.731 mm 265 mils L 6.731 mm 265 mils L 1.905 mm 75 mils L 0.025 mm 1 mils L 0.025 mm 1 mils L 0.025 mm 1 mils L 5.334 mm 210 mils L 1.270 mm 50 mils L 1.270 mm 50 mils L 25.400 mm 1000 mils W2 0.025 mm 1 mils W2 3.048 mm 120 mils W2 3.048 mm 120 mils W2 9.144 mm 360 mils W2 9.144 mm 360 mils W2 9.144 mm 360 mils W2 9.144 mm 360 mils L 0.127 mm 5 mils W2 9.144 mm 360 mils W2 9.144 mm 360 mils W2 9.144 mm 360 mils L 0.127 mm 5 mils L 0.127 mm 5 mils W2 9.144 mm 360 mils L 0.127 mm 5 mils 3rd Dimension W3 25.654 mm 1010 mils W3 2.032 mm L 3.683 mm 3.683 mm145 mils L 1.270 mm 1.270 mm50 mils L 1.270 mm 1.270 mm50 mils 80 mils 145 mils 50 mils 50 mils W3 9.144 mm 360 mils W3 3.048 mm 120 mils W3 5.080 mm 200 mils W3 2.540 mm 100 mils W3 3.048 mm 120 mils W3 5.080 mm 200 mils W3 2.540 mm 100 mils Data Sheet 11 of 15 Rev. 03, 2015-01-14 11 Page

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Hoja de datos destacado

Número de pieza	Descripción	Fabricantes
PTFB191501E	Thermally-Enhanced High Power RF LDMOS FETs	Infineon Technologies
PTFB191501F	Thermally-Enhanced High Power RF LDMOS FETs	Infineon Technologies

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