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PDF PTFB192503EL Data sheet ( Hoja de datos )

Número de pieza PTFB192503EL
Descripción Thermally-Enhanced High Power RF LDMOS FETs
Fabricantes Infineon Technologies 
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PTFB192503EL
PTFB192503FL
Thermally-Enhanced High Power RF LDMOS FETs
240 W, 1930 – 1990 MHz
Description
The PTFB192503EL and PTFB192503FL are 240-watt LDMOS
FETs intended for use in multi-standard cellular power amplifier
applications in the 1930 to 1990 MHz frequency band. Features
include input and output matching, high gain, wide signal
bandwidth and reduced memory effects for improved DPD
correctability. Manufactured with Infineon's advanced LDMOS
process, these devices provide excellent thermal performance
and superior reliability.
PTFB192503EL
Package H-33288-6
PTFB192503FL
Package H-34288-4/2
Two-carrier WCDMA 3GPP
VDD = 30 V, IDQ = 1.85 A, ƒ = 1990 MHz
3GPP WCDMA, PAR = 8:1,
10 MHz carrier spacing BW 3.84MHz
20 50
19 Gain
40
18 30
17
Efficiency
16
20
10
15 0
33 35 37 39 41 43 45 47 49
Output Power (dBm)
Features
• Broadband internal input and output matching
• Enhanced for use in DPD error correction systems
• Typical two-carrier WCDMA performance, 30 V,
1990 MHz
- Average output power = 50 W
- Linear gain = 19 dB
- Drain efficiency = 28 %
- Intermodulation distortion = –35 dBc
• Typical CW performance, 1990 MHz, 30 V
- Output power at P1dB = 240 W
- Efficiency = 55%
• Increased negative gate-source voltage range for
improved performance in Doherty peaking
amplifiers
• Integrated ESD protection. Human Body Model,
Class 2 (minimum)
• Capable of handling 10:1 VSWR @ 30 V, 240 W
(CW) output power
• Pb-free, RoHS-compliant
RF Characteristics
Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test
fixture)
VDD = 30 V, IDQ = 1.9 A, POUT = 50 W average, ƒ1 = 1980 MHz, ƒ2 = 1990 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8:1 dB @ 0.01% CCDF
Characteristic
Symbol
Gain
Drain Efficiency
Gps
hD
Intermodulation Distortion
IMD
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 15
Min
Typ
19
28
–35
Max
Unit
dB
%
dBc
Rev. 09.1, 2016-06-13

1 page




PTFB192503EL pdf
Typical Performance (cont.)
CW
Gain & Efficiency vs. Output Power
VDD = 30 V, IDQ = 1.85 A, ƒ = 1990 MHz
21
20
Gain
19
18
17
16 Efficiency
+85° C
+25 ° C
–10° C
15
40
45 50
Output Power (dBm)
60
50
40
30
20
10
0
55
Intermodulation Distortion
vs. Output Power
VDD = 30 V, IDQ = 1.85 A,
ƒ1 = 1990 MHz, ƒ2 = 1989 MHz
-20
-30
-40
IMD3
-50
IMD5
-60
IMD7
-70
35 40 45 50
Output Power, PEP (dBm)
55
PTFB192503EL
PTFB192503FL
CW Performance
Gain vs. Output Power
VDD = 30 V, ƒ = 1990 MHz
20
IDQ = 2.5 A
19
IDQ = 1.85 A
18
IDQ = 1.2 A
17
40
45 50
Output Power (dBm)
55
Data Sheet
5 of 15
Rev. 09.1, 2016-06-13

5 Page





PTFB192503EL arduino
PTFB192503EL
PTFB192503FL
Reference Circuit (cont.)
Circuit Assembly Information
Test Fixture Part No.
LTN/PTFB192503EF
PTFB192503EL/FL_02Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower
RO4350, .030
(60)
RO4350, .030
(60)
C803
R801
VDD
C802
R804
C801
R805
S3
S1
R802
R803
S2
C105
C103
R101
C107
RF_IN C101
C104
C106
R102
C102
C206
C210 C208
C202
VDD
C213
C204 10 µF
C207
RF_OUT
C212
C205
C203
C211 C209
C201
VDD
PTFB192503_IN_02
Reference circuit assembly diagram (not to scale)
Data Sheet
11 of 15
PTFB192503_OUT_02
b192503efl_CD_11-09-2010
Rev. 09.1, 2016-06-13

11 Page







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