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PTFB192503FL 데이터시트 PDF




Infineon Technologies에서 제조한 전자 부품 PTFB192503FL은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 PTFB192503FL 자료 제공

부품번호 PTFB192503FL 기능
기능 Thermally-Enhanced High Power RF LDMOS FETs
제조업체 Infineon Technologies
로고 Infineon Technologies 로고


PTFB192503FL 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




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PTFB192503FL 데이터시트, 핀배열, 회로
PTFB192503EL
PTFB192503FL
Thermally-Enhanced High Power RF LDMOS FETs
240 W, 1930 – 1990 MHz
Description
The PTFB192503EL and PTFB192503FL are 240-watt LDMOS
FETs intended for use in multi-standard cellular power amplifier
applications in the 1930 to 1990 MHz frequency band. Features
include input and output matching, high gain, wide signal
bandwidth and reduced memory effects for improved DPD
correctability. Manufactured with Infineon's advanced LDMOS
process, these devices provide excellent thermal performance
and superior reliability.
PTFB192503EL
Package H-33288-6
PTFB192503FL
Package H-34288-4/2
Two-carrier WCDMA 3GPP
VDD = 30 V, IDQ = 1.85 A, ƒ = 1990 MHz
3GPP WCDMA, PAR = 8:1,
10 MHz carrier spacing BW 3.84MHz
20 50
19 Gain
40
18 30
17
Efficiency
16
20
10
15 0
33 35 37 39 41 43 45 47 49
Output Power (dBm)
Features
• Broadband internal input and output matching
• Enhanced for use in DPD error correction systems
• Typical two-carrier WCDMA performance, 30 V,
1990 MHz
- Average output power = 50 W
- Linear gain = 19 dB
- Drain efficiency = 28 %
- Intermodulation distortion = –35 dBc
• Typical CW performance, 1990 MHz, 30 V
- Output power at P1dB = 240 W
- Efficiency = 55%
• Increased negative gate-source voltage range for
improved performance in Doherty peaking
amplifiers
• Integrated ESD protection. Human Body Model,
Class 2 (minimum)
• Capable of handling 10:1 VSWR @ 30 V, 240 W
(CW) output power
• Pb-free, RoHS-compliant
RF Characteristics
Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test
fixture)
VDD = 30 V, IDQ = 1.9 A, POUT = 50 W average, ƒ1 = 1980 MHz, ƒ2 = 1990 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8:1 dB @ 0.01% CCDF
Characteristic
Symbol
Gain
Drain Efficiency
Gps
hD
Intermodulation Distortion
IMD
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 15
Min
Typ
19
28
–35
Max
Unit
dB
%
dBc
Rev. 09.1, 2016-06-13




PTFB192503FL pdf, 반도체, 판매, 대치품
Typical Performance (cont.)
Two-tone Drive-up
VDD = 30 V, IDQ = 1.85 A,
ƒ1 = 1990 MHz, ƒ2 = 1989 MHz
-20 45
-25 40
-30 35
-35 30
-40 25
-45 Efficiency
-50
20
15
-55 10
-60 IMD 3
-65
5
0
37 39 41 43 45 47 49 51 53 55
Output Power, PEP (dBm)
Two-tone Drive-up
at Selected Frequencies
VDD = 30 V, IDQ = 1.85 A, Tone Spacing = 1 MHz
-20
1930 MHz
-30 1960 MHz
1990 MHz
IMD3
-40
-50
-60
35
40 45 50
Output Power, PEP (dBm)
55
PTFB192503EL
PTFB192503FL
Two-tone Drive-up
VDD = 30 V, IDQ = 1.85 A,
ƒ1 = 1990 MHz, ƒ2 = 1989 MHz
20 50
19 Gain
40
18 30
17
Efficiency
16
20
10
15 0
37 39 41 43 45 47 49 51 53 55
Output Power, PEP (dBm)
Two-tone Voltage Sweep
IDQ = 1.85 A, ƒ1 = 1990 MHz, ƒ2 = 1989 MHz
Output Power = 53.3 dBm
60 -15
50 -20
Efficiency
40 -25
30 IMD3
-30
20 Gain
-35
10 -40
22 24 26 28 30 32 34
Supply Voltage (V)
Data Sheet
4 of 15
Rev. 09.1, 2016-06-13

4페이지










PTFB192503FL 전자부품, 판매, 대치품
PTFB192503EL/FL_INPUT
PTFB192503EL
PTFB192503FL
Reference Circuit
C802
1000 pF
S2
8
In
NC
4
2
1
Out
NC
3 6 75
C803
1000 pF
R801
100 Ohm
C801
1000 pF
R805
1200 Ohm
S3
R804
1300 Ohm
2C
14
BS
3E
S1
R802
10 Ohm
R803
10 Ohm
3
TL110
RF_IN
er = 3.48
H = 30 mil
RO/RO4350B1
TL112
TL127 2 3
1
TL113
TL128 2 3
1
TL135 2 3
1
TL121
R101
10 Ohm TL118
TL108
12
3
C105
2200000 pF
TL115
C107
8.2 pF
C103
10000000 pF
TL122
TL106
TL114
TL101 TL109 TL124
C101
10 pF
TL103
TL126 TL129 TL102
TL111
TL136 2 3
1
C104
10000000 pF
TL134 2 3
1
C106
2200000 pF
C102
8.2 pF
TL104
2
13
4
TL125
TL133
TL132 2 3
1
TL120
R102
10 Ohm
TL117
TL116
TL107
3
21
TL123 TL105
b192503efl_bdin_08-23-2010
TL119
TL131
TL130
GATE DUT
(Pin G)
Reference circuit input schematic for ƒ = 1990 MHz
Data Sheet
7 of 15
Rev. 09.1, 2016-06-13

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PTFB192503FL

Thermally-Enhanced High Power RF LDMOS FETs

Infineon Technologies
Infineon Technologies

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