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PTFB211503FL 데이터시트 PDF




Infineon에서 제조한 전자 부품 PTFB211503FL은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 PTFB211503FL 기능
기능 Thermally-Enhanced High Power RF LDMOS FETs
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PTFB211503FL 데이터시트, 핀배열, 회로
PTFB211503EL
PTFB211503FL
Thermally-Enhanced High Power RF LDMOS FETs
150 W, 2110 – 2170 MHz
Description
The PTFB211503EL and PTFB211503FL are thermally-enhanced,
150-watt, LDMOS FETs designed for cellular power amplifier
applications in the 2110 to 2170 frequency band. Features
include I/O matching, high gain, and thermally-enhanced ceramic
open-cavity packages with slotted and earless flanges.Manufactured with
Infineon's advanced LDMOS process, these devices provide excellent
thermal performance and superior reliability.
PTFB211503EL
H-33288-6
PTFB211503FL
H-34288-4/2
Two-carrier WCDMA 3GPP Drive-up
VDD = 30 V, IDQ = 1.20 A, ƒ = 2170 MHz, 3GPP
WCDMA, PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
-20 40
-25 35
-30 30
Efficiency
-35 25
-40 20
-45
IMD Up
ACPR 15
-50
IMD Low
10
-55 5
-60 0
31 33 35 37 39 41 43 45 47 49
Output Power (dBm)
Features
• Broadband internal matching
• Enhanced for use in DPD error correction systems
• Typical two-carrier WCDMA performance at 2170
MHz, 30 V
- Average output power = 32 W
- Linear Gain = 18 dB
- Efficiency = 29%
- Intermodulation distortion = –34 dBc
- Adjacent channel power = –37 dBc
• Typical CW performance, 2170 MHz, 30 V
- Output power at P1dB = 150 W
- Efficiency = 55%
• Increased negative gate-source voltage range
for improved performance in Doherty peaking
amplifiers
• Integrated ESD protection
• Capable of handling 10:1 VSWR @ 30 V, 150 W
(CW) output power
• Pb-Free and RoHS compliant
RF Characteristics
Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 30 V, IDQ = 1.2 A, POUT = 32 W AVG, ƒ1 = 2135 MHz, ƒ2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ Max Unit
Gain
Drain Efficiency
Gps
hD
— 18 — dB
— 29
%
Adjacent Channel Power Ratio
ACPR — –36 — dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 14
Rev. 04.1, 2016-06-14




PTFB211503FL pdf, 반도체, 판매, 대치품
Typical Performance (cont.)
Two-tone Drive-up
VDD = 30 V, IDQ = 1.20 A,
ƒ1 = 2170 MHz, ƒ2 = 2169 MHz
20 50
19
Gain
18
40
30
17
16 Efficiency
20
10
15
40
42 44 46 48 50 52
Output Power, PEP (dBm)
0
54
PTFB211503EL
PTFB211503FL
Two-tone Drive-up
VDD = 30 V, IDQ = 1.20 A,
ƒ1 = 2170 MHz, ƒ2 = 2169 MHz
-15 50
-25 40
Efficiency
-35 30
-45 20
-55
IMD3
10
-65 0
40 42 44 46 48 50 52 54
Output Power, PEP (dBm)
Two-tone Broadband Performance
VDD = 30 V, IDQ = 1.20 A, POUT = 63 W
60 -5
55
IRL
50
-10
-15
45 -20
40 Efficiency
35
-25
-30
30 IMD3
25
20 Gain
-35
-40
-45
15 -50
2070 2090 2110 2130 2150 2170 2190 2210
Frequency (MHz)
Two-tone Drive-up at
Selected Frequencies
VDD = 30 V, IDQ = 1.20 A, tone spacing = 1 MHz
-20
2170MHz
-30 2140MHz
2110MHz
-40
-50
-60
-70
41
43 45 47 49 51
Output Power, PEP (dBm)
53
Data Sheet
4 of 14
Rev. 04.1, 2016-06-14

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PTFB211503FL 전자부품, 판매, 대치품
PTFB211503EL/FL_INPUT
PTFB211503EL
PTFB211503FL
Reference Circuit
C802
1000 pF
S1
8
In
NC
4
2
1
Out
NC
3 6 75
C801
1000 pF
C803
1000 pF
R801
1200 Ohm
R802
1300 Ohm
R804
1
2C
4
S2
100 Ohm
BS
3E
S3
R803
10 Ohm
R805
10 Ohm
3
TL114
TL118
TL138 2 3
1
TL128
R101
10 Ohm
TL124
TL110 TL129 TL109
12
3
TL119
TL115
C106
2.2 pF
TL130
TL121
C101
10 pF
TL120
RF_IN
TL104
TL113 TL102
TL127 TL134 TL135 TL131 2
TL132 TL111 TL105 TL1062
13
C107
4
8.2 pF C103
4710000 pF
TL133
PTFB2TL1137112 3 503EL/FL_C0O.160p5FUTPUT
TL116 C104
4710000 pF
1
4
TL136 2 3
1
TL140
C102
10 pF
TL122
TL103
TL117
TL107
TL126
R104
10 Ohm
TL123
TL139
3
21
TL101 TL108
b211503efl_bdin_08-19-2010
3
TL125
TL112 GATE DUT
(Pin G)
Reference circuit input schematic for ƒ = 2170 MHz
DUT
(Pin V)
TL214
TL223 TL221
TL220
12
3
C202
2200000 pF
12
3
C201
1000000 pF
TL218
C204
10000000 pF
TL215
3
12
TL217
TL219
12
3
C203
10000000 pF
TL222
VDD
DRAIN DUT
(Pin D)
TL203
TL209
TL202
TL206 TL201
TL212 TL229
12
3
C208
0.5 pF
C207
TL208 TL204 TL210 8.2 pF TL211 TL205 TL207
RF_OUT
DUT
(Pin V)
TL213
C210
2200000 pF
TL226
TL228
3
21
C206
1000000 pF
TL227
3
21
TL230
TL231
21
C205
3
10000000 pF
C209
10000000
TL216 TL225
3
b211503efl_bdout_08-19-2010
2
1
TL224
VDD
Reference circuit output schematic for ƒ = 2170 MHz
Data Sheet
7 of 14
Rev. 04.1, 2016-06-14

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PTFB211503FL

Thermally-Enhanced High Power RF LDMOS FETs

Infineon
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