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PTFB211803FL 데이터시트 PDF




Infineon에서 제조한 전자 부품 PTFB211803FL은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 PTFB211803FL 기능
기능 Thermally-Enhanced High Power RF LDMOS FETs
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PTFB211803FL 데이터시트, 핀배열, 회로
PTFB211803EL
PTFB211803FL
Thermally-Enhanced High Power RF LDMOS FETs
180 W, 2110 – 2170 MHz
Description
The PTFB211803EL and PTFB211803FL are 180-watt LDMOS FETs
intended for use in multi-standard cellular power amplifier applications
in the 2110 to 2170 MHz frequency band. Features include input and
output matching, high gain and thermally-enhanced packages with
slotted or earless flanges. Manufactured with Infineon's advanced
LDMOS process, these devices provide excellent thermal perform-
ance and superior reliability.
PTFB211803EL
H-33288-6
PTFB211803FL
H-34288-4/2
Two-carrier WCDMA 3GPP Drive-up
VDD = 30 V, IDQ = 1.30 A, ƒ = 2170 MHz, 3GPP
WCDMA, PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
-20 40
-25 35
-30
Efficiency
30
-35 25
-40 IMD Up
20
-45 ACPR 15
-50 10
IMD Low
-55 5
-60 0
31 33 35 37 39 41 43 45 47 49
Output Power (dBm)
Features
• Broadband internal matching
• Typical two-carrier WCDMA performance at
2170 MHz, 30 V
- Average output power = 40 W
- Linear Gain = 17.5 dB
- Efficiency = 29.7%
- Intermodulation distortion = –34 dBc
- Adjacent channel power = –37 dBc
• Typical CW performance, 2170 MHz, 30 V
- Output power at P1dB = 180 W
- Efficiency = 55%
• Increased negative gate-source voltage range for
improved performance in Doherty amplifiers
• Integrated ESD protection.
• Capable of handling 10:1 VSWR @ 30 V,
180 W (CW) output power
• Pb-free and RoHS compliant
RF Characteristics
Two-carrier WCDMA Measurements (not subject to production test–verified by design/characterization in Infineon test fixture)
VDD = 30 V, IDQ = 1.3 A, POUT = 40 W average, ƒ1 = 2135 MHz, ƒ2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ Max Unit
Gain
Drain Efficiency
Gps
hD
— 17.5
— 29.5
dB
%
Adjacent Channel Power Ratio
ACPR
— –38
dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 14
Rev. 05.1, 2016-06-15




PTFB211803FL pdf, 반도체, 판매, 대치품
Typical Performance (cont.)
Two-tone Drive-up
VDD = 30 V, IDQ = 1.30 A,
ƒ1 = 2170 MHz, ƒ2 = 2169 MHz
20 50
19 40
18 Gain
17
30
20
16 Efficiency
10
15
40
42 44 46 48 50 52
Output Power, PEP (dBm)
0
54
PTFB211803EL
PTFB211803FL
Two-tone Drive-up
VDD = 30 V, IDQ = 1.30 A,
ƒ1 = 2170 MHz, ƒ2 = 2169 MHz
-15 50
-25
Efficiency
40
-35 30
IMD3
-45 20
-55 10
-65 0
40 42 44 46 48 50 52 54
Output Power, PEP (dBm)
Two-tone Broadband Performance
VDD = 30 V, IDQ = 1.30 A, POUT = 63 W
55 -10
45 -20
IRL Efficiency
35 -30
IMD3
25 -40
Gain
15
2080
2100
2120 2140 2160 2180
Frequency (MHz)
-50
2200
Two-tone Drive-up at
Selected Frequencies
VDD = 30 V, IDQ = 1.30 A, tone spacing = 1 MHz
-20
2170MHz
2140MHz
-30 2110MHz
-40
-50
41
43 45 47 49 51
Output Power, PEP (dBm)
53
Data Sheet
4 of 14
Rev. 05.1, 2016-06-15

4페이지










PTFB211803FL 전자부품, 판매, 대치품
PTFB211803EL
PTFB211803FL
Reference Circuit
C801
1000 pF
S2
8 In
1
Out
4 NC
2
3
NC
6 75
C802
1000 pF
C803
1000 pF
R805
1200 Ohm
R801
1300 Ohm
R803
10 Ohm
2C
S11 4
BS
S43 E
R804
100 Ohm
R802
10 Ohm
3
TL111
TL108
2
TL114 3
1
TL107
TL126 2 3
1
RF_IN
TL121 TL112
TL123
2
TL115 3
1
C106
10 pF
TL110
TL128 2 3
1
er = 3.48
H = 20 mil
RO/RO4350 B1
TL116 2 3
1
TL109
TL119
TL133
R102
10 Ohm
C102
100000 pF
TL102
TL125
12
3
TL105
C101
10 pF
TL134 TL117
TL106
C103
4710000 pF
TL132 TL137
TL136
12
3
TL131
C104
4710000 pF
TL130
C108
2.1 pF
C105
100000 pF
C107
10 pF
TL135
R101
10 Ohm
TL104
TL103
3
21
TL129
TL120 2
13
4
TL122
TL124 TL118
b211803efl_bdin_08-26-2010
TL101 TL113
GATE DUT
(Pin G)
Reference circuit input schematic for ƒ = 2170 MHz
DUT
(Pin V)
TL210
TL230 TL229 TL232
21
3
C207
1000000 pF
TL234 TL231
21
3
C208
2200000 pF
TL233
TL212
C210
10000000 pF
TL237
3
21
TL214
TL213
12
3
C205
100000000 pF
TL215
VDD
DRAIN DUT
(Pin D)
TL238 TL205 TL223 TL226 TL202
TL222
TL208 TL227
12
3
C203
0.3 pF
C201
TL204 TL235 TL206 10 pF TL207 TL201 TL203
RF_OUT
er = 3.48
H = 20 mil
RO/RO4350 B1
DUT
(Pin V)
C209
1000000 pF
TL209 TL236 TL220
TL224
3
21
C206
2200000 pF
TL219
TL225
3
21
TL228
TL211
Reference circuit output schematic for ƒ = 2170 MHz
Data Sheet
7 of 14
C204
100000000 pF
TL221
21
3
C202
10000000 pF
TL216 TL218
3
b211803efl_bdout_08-26-2010
2
1
TL217
VDD
Rev. 05.1, 2016-06-15

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PTFB211803FL

Thermally-Enhanced High Power RF LDMOS FETs

Infineon
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