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PDF PTFB210801FA Data sheet ( Hoja de datos )
| Número de pieza | PTFB210801FA | |
| Descripción | Thermally-Enhanced High Power RF LDMOS FET | |
| Fabricantes | Infineon | |
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PTFB210801FA
Thermally-Enhanced High Power RF LDMOS FET
80 W, 28 V, 2110 – 2170 MHz
Description
The PTFB210801FA LDMOS FET is designed for use in multi-stand-
ard cellular power amplifier applications in the 2110 to 2170 MHz
frequency band. Features include input and output matching,
high gain and thermally-enhanced packages with earless flanges.
Manufactured with Infineon's advanced LDMOS process, this device
provides excellent thermal performance and superior reliability.
PTFB210801FA
Package H-37265-2
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 750 mA,
ƒ = 2140 MHz, 10 MHz Spacing, 8dB PAR
-15
Adj Lower
-20
Adj Upper
-25 Alt
-30 Efficiency
-35
-40
-45
45
40
35
30
25
20
15
10
-50 5
36 37 38 39 40 41 42 43 44 45 46 47 48
Output Power (dBm)
Features
• Broadband internal matching
• Typical single-carrier WCDMA performance at
2170 MHz, 28 V
- Average output power = 25 W
- Linear Gain = 18.5 dB
- Efficiency = 32.5%
- Adjacent channel power = –37 dBc
• Typical CW performance, 2170 MHz, 28 V
- Output power at P1dB = 80 W
- Efficiency = 55%
• Integrated ESD protection
• Capable of handling 10:1 VSWR @ 28 V,
80 W (CW) output power
• Pb-free and RoHS compliant
RF Characteristics
Two-carrier WCDMA Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 750 mA, POUT = 20 W average, ƒ1 = 2160 MHz, ƒ2 = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ Max Unit
Gain
Drain Efficiency
Gps
hD
18 18.5
28 31
—
—
dB
%
Intermodulation Distortion
IMD
— –30 –28 dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 01.1, 2016-06-14
1 page  
PTFB210801FA
Reference Circuit
C802
1000 pF
S4
87
16
25
34
C803
1000 pF
R804
2000 Ohm
C801
1000 pF
R803
1200 Ohm
R802
1300 Ohm
S5
2C
14
BS
3E
S3
1
3
2
R801
3000 Ohm
TL124
TL122
2
3
1
TL125
R102
2000 Ohm TL126 TL121
21
3
C101
10000000 pF
TL127
TL123
1
3
2
TL120
S2
4
1
3
2
TL101
2
3
1
L2
22 nH
TL102
12
3
RF_IN
TL107
TL129 TL130
C105
15 pF
R103
10 Ohm
C102
TL131 TL132 TL109 15 pF
TL110
TL112
12
3
C104
1.5 pF
TL111
TL105
TL108
TL103
R101
10 Ohm
TL104 2
1
3
4
R104
10 Ohm
TL106
1
TL117 3
2
L1
22 nH
TL119
TL115
3
12
er = 3.66
H = 20 mil
RO/RO4350B1
C103
10000000 pF
TL113
TL114
3
21
S1
4
2
3
1
TL118
TL128
TL116
b210801fa_bdin_03-15-2011
3
2
1
GATE DUT
(Pin G)
Reference circuit input schematic for ƒ = 2170 MHz
DRAIN DUT
(Pin D)
er = 3.66
H = 20 mil
RO/RO4350B1
C201
10000000 pF
TL209
TL203
TL205 2
1
3
4
C211
4710000 pF
TL221
21
3
C204
18 pF
C205
22000000 pF
TL227
TL228
3
21
TL210 TL211
TL202
TL218
TL207 2
1
3
4
TL224
C206
2.7 pF
TL213
2
1
3
4
C207
2.7 pF
TL214
TL219
TL223
TL212
12
3
C208
2.2 pF
TL216
C209
15 pF
TL215
TL204
TL208
C202
4710000 pF
TL201
TL206 4
1
2
C203
10000000 pF
3
C212
18 pF
TL222
3
21
TL220
TL217
12
3
C210
22000000 pF
TL226
TL225
b210801fa_bdout_03-15-2011
RF_OUT
Reference circuit output schematic for ƒ = 2170 MHz
Data Sheet
5 of 11
Rev. 01.1, 2016-06-14
5 Page 
PTFB210801FA V1
Revision History
Revision Date
01 2011-03-30
01.1
2016-06-14
Data Sheet Type
Production
Production
Page
All
2
Subjects (major changes since last revision)
Data Sheet reflects advance specification for product development
Updated ordering information
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
Edition 2016-06-14
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In-
fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device
or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
11 of 11
Rev. 01.1, 2016-06-14
11 Page | ||
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