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PDF PTFB212507SH Data sheet ( Hoja de datos )

Número de pieza PTFB212507SH
Descripción Thermally-Enhanced High Power RF LDMOS FET
Fabricantes Infineon 
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PTFB212507SH
Thermally-Enhanced High Power RF LDMOS FET
200 W, 28 V, 2110 – 2170 MHz
Description
The PTFB212507SH is a 200-watt LDMOS FET intended for use
in multi-standard cellular power amplifier applications in the 2110
to 2170 MHz frequency band. Features include input and output
matching, high gain and thermally-enhanced package with earless
flange. Manufactured with Infineon's advanced LDMOS process, this
device provides excellent thermal performance and superior reliability.
PTFB212507SH
Package H-37288G-4/2
Single-carrier WCDMA, 3GPP Drive-up
VDD = 28 V, IDQ = 1.6 A, ƒ = 2170 MHz
3GPP WCDMA, PAR = 7.5 dB, BW 3.84 MHz
-15
-20 IMD Low
-25 IMD Up
-30 Efficiency
45
40
35
30
-35 25
-40 20
-45 15
-50 10
-55 5
-60 0
34 36 38 40 42 44 46 48 50 52
Output Power (dBm)
Features
• Broadband internal matching
• Wide video bandwidth
• Typical two-carrier WCDMA performance,
2170 MHz, 28 V, 3GPP signal, PAR = 8 dB,
10 MHz carrier spacing
- Average output power = 40 W
- Linear gain = 18 dB
- Efficiency = 27%
- Intermodulation distortion = –35 dBc
- Adjacent channel power= –39 dBc
• Typical CW performance, 2170 MHz, 28 V
- Output power at P1dB = 200 W
- Efficiency = 52%
- Gain = 17 dB
• Capable of handling 10:1 VSWR @28 V, 200 W
(CW) output power
• Integrated ESD protection
• Low thermal resistance
• Pb-free and RoHS compliant
RF Characteristics
Single-carrier WCDMA Specifications (tested in Infineon test fixture)
VDD = 30 V, IDQ = 1850 mA, POUT = 50 W avg, ƒ = 2170 MHz. 3GPP signal, 3.84 MHz channel bandwidth,
10 dB peak/average @ 0.01% CCDF
Characteristic
Linear Gain
Drain Efficiency
Adjacent Channel Power Ratio
Symbol
Gps
ηD
ACPR
Min
16.75
25
Typ
18
27.5
–36.5
Max
19
–32
Unit
dB
%
dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 13
Rev. 03, 2015-10-30

1 page




PTFB212507SH pdf
PTFB212507SH
Typical Performance (cont.)
Two-tone Drive-up
VDD = 28 V, IDQ = 1.6 A,
ƒ1 = 2170 MHz, ƒ2 = 2169 MHz
20 50
19
Gain
18
40
30
17 20
16
Efficiency
10
15 0
37 39 41 43 45 47 49 51 53
Output Power, PEP (dBm)
Two-tone Drive-up
VDD = 28 V, IDQ = 1.6 A,
ƒ1 = 2170 MHz, ƒ2 = 2169 MHz
-15 50
-25 40
-35 IMD3
-45
30
20
-55 10
Efficiency
-65 0
37 39 41 43 45 47 49 51 53 55
Output Power, PEP (dBm)
Two-tone Drive-up at
Selected Frequencies
VDD = 28 V, IDQ = 1.6 A, Tone Spacing = 1 MHz
-20
-30
-40
-50
-60
-70
35
2110 MHz
2140 MHz
2170 MHz
40 45 50
Output Power, PEP (dBm)
55
Two-tone Broadband Performance
VDD = 28 V, IDQ = 1.6 A, POUT = 89 W
60
55
50
45
40
35
30
25
20
15
2040
RL
Efficiency
IMD3
Gain
2080 2120 2160 2200
Frequency (MHz)
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
2240
Data Sheet
5 of 13
Rev. 03, 2015-10-30

5 Page





PTFB212507SH arduino
Reference Circuit (cont.)
Components Information
Component
Description
Input
C101
Chip capacitor, 2.1 pF
C102
C103, C106
C104, C105
Chip capacitor, 10 pF
Chip capacitor, 4.7 µF
Chip capacitor, 10 pF
C801, C802, C803
R101, R103, R804
Capacitor, 1000 pF
Resistor, 10 Ohm
R102, R104
R801
R802
Resistor, 10 Ohm
Resistor, 1200 Ohm
Resistor, 1300 Ohm
R803
S1
S2
Resistor, 100 Ohm
Transistor
Voltage Regulator
S3 Potentiometer, 2k ohm
Output
C201
C202, C203
C204, C205
C206, C207
C208, C209
C210, C211
C212, C213
Chip capacitor, 10 pF
Chip capacitor, 1.9 pF
Capacitor, 10 µF
Chip capacitor, 1 µF
Capacitor, 10 µF
Chip capacitor, 2.2 µF
Capacitor, 220 µF
Supplier
ATC
ATC
Digi-Key
ATC
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
ATC
ATC
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
PTFB212507SH
P/N
ATC100B2R1CW500XB
ATC100B100CW500XB
493-2372-2-ND
ATC100A100JW500XB
PCC1772CT-ND
P10ECT-ND
P10GCT-ND
P1.2KGCT-ND
P1.3KGCT-ND
P101ECT-ND
BCP56
LM78L05ACM-ND
3224W-202ECT-ND
ATC100A100GW150XB
ATC100B1R9CW500XB
587-1818-2-ND
445-1411-2-ND
281M5002106K
445-1447-2-ND
PCE4444TR-ND
Data Sheet
11 of 13
Rev. 03, 2015-10-30

11 Page







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