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PDF PTFB213208FV Data sheet ( Hoja de datos )

Número de pieza PTFB213208FV
Descripción Thermally-Enhanced High Power RF LDMOS FET
Fabricantes Infineon 
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PTFB213208FV
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FET
320 W, 28 V, 2110 – 2170 MHz
Description
The PTFB213208SV is a 320-watt LDMOS FET intended for use
in multi-standard cellular power amplifier applications in the 2110
to 2170 MHz frequency band. Features include input and output
matching, high gain and thermally-enhanced package with earless
flange. Manufactured with Infineon's advanced LDMOS process, this
device provides excellent thermal performance and superior reliability.
PTFB213208FV
Package H-34275G-6/2
Two-carrier WCDMA 3GPP Drive-up
VDD = 28 V, IDQ = 2.7 A, ƒ = 2170 MHz,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, BW = 3.84 MHz
-25 35
-30
IMD Up
-35
30
25
-40
IMD Low
-45
-50
-55
20
ACPR
Efficiency
15
10
5
-60
b213208fv-gr16
0
36 38 40 42 44 46 48 50 52
Average Output Power (dBm)
Features
• Broadband internal matching
• Wide video bandwidth
• Typical pulsed CW performance, 2140 MHz, 28 V
(combined outputs)
- Output power @ P1dB = 343 W
- Efficiency = 54%
- Gain = 16.5 dB
• Typical single-carrier WCDMA performance,
2140 MHz, 28 V
- Output power = 50 dBm avg
- Gain = 17 dB
- Efficiency = 32%
• Capable of handling 10:1 VSWR @ 28 V, 320 W
(CW) output power
• Integrated ESD protection
• Low thermal resistance
• Pb-free and RoHS compliant
RF Characteristics
Single-carrier WCDMA Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 2.6 A, POUT = 85 W average, ƒ = 2170 MHz
3GPP WCDMA signal, 3.84 MHz channel bandwidth, peak/average = 10 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Adjacent Channel Power Ratio
Symbol
Gps
ηD
ACPR
Min
15.75
Typ
17.0
32
–35
Max
–29.5
Unit
dB
%
dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet – DRAFT ONLY
1 of 13
Rev. 02, 2012-07-03

1 page




PTFB213208FV pdf
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Two-tone Drive-up
at selected frequencies
VDD = 28 V, IDQ = 2.7 A, tone spacing = 1 MHz
-20
-30
-40
-50
-60
-70
36
2110 MHz
2140 MHz
2170 MHz
40
44
48
b213208fv-gr13
52
Output Power, PEP (dBm)
PTFB213208FV
Two-tone Broadband Performance
VDD = 28 V, IDQ = 2.7 A, POUT = 126 W
45 -5
40 IRL -10
35 -15
30
Efficiency
25
-20
-25
20 -30
15 Gain
10
-35
-40
5
2050
2100
2150
2200
b213208fv-gr15
-45
2250
Frequency(MHz)
Two-tone Drive-up
VDD = 28 V, IDQ = 2.7 A, ƒ = 2170 MHz
-20
-30
-40
-50
-60
-70
35
50
40
IM3L
Efficiency
30
20
10
40
45
50
b213208fv-gr12
0
55
Output Power, PEP (dBm)
Two-tone Drive-up
VDD = 28 V, IDQ = 2.7 A, ƒ = 2140 MHz,
tone spacing = 1 MHz
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
35
IM3L
IM5L
IM7L
Efficiency
40
30
20
10
40 45 50
Output Power, PEP (dBm)
b213208fv-gr11
0
55
Data Sheet – DRAFT ONLY
5 of 13
Rev. 02, 2012-07-03

5 Page





PTFB213208FV arduino
PTFB213208FV
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
C801
R04350, .020 (60) VDD
R803
R106
R105
R101
C109
S1
S3
C110
S2
R801
C101
R102
C105
C108
C802
R802
C803
RF_IN
C106
C102
C107
C103
C104
R104 R103
PTFB213208_IN_02
Reference circuit assembly diagram (not to scale)
R04350, 020 (60)
C215
C218
10 μF
C213
VDD
C214 C217 C217
C212
C209
C201
RF_OUT
C202 C208
C210
C211
C206 C203
VDD
C206
C207
μF 10
C204
PTFB 2 1 3 2 0 8_OU T_ 0 2
b 2 1 3 0 2 0f s v - v 1 _C D _ 3 - 1 4 - 2 0 1 2
Component ID
Description
Input
C101, C102, C104
C103, C108
Chip capacitor, 300 pF
Chip capacitor, 20 pF
C105
C106
C107
C109
C801, C802, C803
R101, R102, R103
R104, R105, R106
R107
Capacitor, 1 nF
Capacitor, 1 nF
Chip capacitor, 6.2 pF
Chip capacitor, 6.2 pF
Capacitor, 1000 pF
Resistor, 5.6 Ω
Resistor, 5.6 Ω
Resistor, 1k Ω
Output
C201
C202
C203
C204, C216
C205
Chip capacitor, 10 pF
Chip capacitor, 10 pF
Capacitor, 100 nF
Capacitor, 10 nF
Capacitor, 10 nF
C206, C214
C207, C213
C208
Chip capacitor, 1 nF
Chip capacitor, 2.2 nF
Chip capacitor, 0.4 pF
C209, C210
C211, C212
C217
Chip capacitor, 0.8 pF
Chip capacitor, 1.3 pF
Capacitor, 100 nF
Data Sheet – DRAFT ONLY
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Rev. 02, 2012-07-03

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