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부품번호 | PTFC270051M 기능 |
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기능 | High Power RF LDMOS Field Effect Transistor | ||
제조업체 | Infineon | ||
로고 | |||
전체 14 페이지수
PTFC270051M
High Power RF LDMOS Field Effect Transistor
5 W, 28 V, 900 – 2700 MHz
Description
The PTFC270051M is an unmatched 5-watt LDMOS FET suitable
for power amplifier applications with frequencies from 900 MHz to
2700 MHz. This LDMOS transistor offers excellent gain, efficiency
and linearity performance in a small overmolded plastic package.
PTFC270051M
Package PG-SON-10
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 65 mA
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
22
Gain
21
60
50
20 40
19 30
18 Efficiency
17
2110 MHz
2140 MHz
2170 MHz
20
10
16
c270051m-gr1.3
0
22 24 26 28 30 32 34 36 38 40
Output Power (dBm)
Features
• Unmatched
• Typical CW performance, 940 MHz, 28 V
- Output power (P1dB) = 6.5 W
- Gain = 23 dB
- Efficiency = 62%
• Typical CW performance, 2170 MHz, 28 V
- Output power (P1dB) = 7.3 W
- Gain = 20.3 dB
- Efficiency = 60%
• Typical CW performance, 2655 MHz, 28 V
- Output power (P1dB) = 7.3 W
- Gain = 19.9 dB
- Efficiency = 59.5%
• Capable of handling 10:1 VSWR @ 28 V, 5 W (CW)
output power
• Integrated ESD protection: Human Body Model
Class 1A (per JESD22-A114)
• Pb-free and RoHS compliant
RF Characteristics, 2170 MHz
CW Specifications (tested in Infineon test fixture)
VDD = 28 V, IDQ = 65 mA, POUT = 5 W, ƒ1 = 2110 MHz, ƒ2 = 2170 MHz
Characteristic
Symbol Min Typ
Gain
Gps 18.5 19.5
Max
—
Unit
dB
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 14
Rev. 01.1, 2016-07-26
Typical Performance, 2170 MHz (cont.)
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 65 mA, ƒ = 2170 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-5
IMD Low
-15 IMD Up
ACPR
-25 Efficiency
65
55
45
-35 35
-45 25
-55 15
-65
c270051m-2100-gr6
5
22 24 26 28 30 32 34 36 38 40
Output Power (dBm)
CW Performance
VDD = 28 V, IDQ = 65 mA
24 66
22 Gain
20
54
42
18 30
Efficiency
16
2110 MHz
2140 MHz
2170 MHz
18
14
c270051m-2100-gr8
6
22 24 26 28 30 32 34 36 38 40
Output Power (dBm)
PTFC270051M
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 65 mA,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-15
-25
-35
-45
2110 IMD Low
2110 IMD Up
2140 IMD Low
2140 IMD Up
2170 IMD Low
2170 IMD Up
-55
c270051m-2100-gr7
22 24 26 28 30 32 34 36 38 40
Output Power (dBm)
CW Performance
at selected supply voltage
IDQ = 65 mA, ƒ = 2170 MHz
22 70
21
20 Gain
60
50
19 40
18 30
17
16
Efficiency
15
VDD = 24 V
VDD = 28 V
VDD = 32 V
20
10
c270051m-2100-gr11
0
22 24 26 28 30 32 34 36 38 40
Output Power (dBm)
Data Sheet
4 of 14
Rev. 01.1, 2016-07-26
4페이지 PTFC270051M
RF Characteristics, 940 MHz
Two-carrier WCDMA Specifications (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 65 mA, POUT = 0.8 W avg, ƒ1 = 935 MHz, ƒ2 = 945 MHz
3GPP WCDMA signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ Max Unit
Gain
Drain Efficiency
Intermodulation Distortion
Gps — 24 — dB
D
— 20.7
—
%
IMD — –42 — dBc
Typical Performance, 940 MHz
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 65 mA
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
25
Gain
24
60
45
23 30
Efficiency
22
920 MHz
15
940 MHz
960 MHz
21
c270051m-900-gr1.3
0
22 24 26 28 30 32 34 36 38 40
Output Power (dBm)
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 65 mA
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-15
-25
-35
-45
920 IMDL
920 IMDU
940 IMDL
940 IMDU
-55
960 IMDL
960 IMDU
c270051m-900-gr7
22 24 26 28 30 32 34 36 38 40
Output Power (dBm)
Data Sheet
7 of 14
Rev. 01.1, 2016-07-26
7페이지 | |||
구 성 | 총 14 페이지수 | ||
다운로드 | [ PTFC270051M.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
PTFC270051M | High Power RF LDMOS Field Effect Transistor | Infineon |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |